Moore and More ›› 2025, Vol. 1 ›› Issue (1): 5-15.DOI: 10.1007/s44275-024-00012-1

• ORIGINAL ARTICLES • Previous Articles    

Manipulating carrier transport in static Schottky MSM structure via mechanical friction

Yahui Li1,2, Zhiyuan Hu1,3, Han Ren1,4, Yangtao Yu1,3, Mingyu Zhang1,3, Mengqiu Li1,3, Fei Wang5, Sicheng Chen2, Yuanjin Zheng2, Zhuoqing Yang1   

  1. 1. National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai, 200240, China;
    2. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore;
    3. Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China;
    4. Institute for Digital Molecular Analytics and Science (IDMxS), Nanyang Technological University, Singapore, 639798, Singapore;
    5. Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
  • Received:2024-08-19 Revised:2024-09-19 Accepted:2024-09-24 Online:2024-11-25 Published:2024-11-25
  • Contact: Sicheng Chen,E-mail:sicheng.chen@ntu.edu.sg;Yuanjin Zheng,E-mail:yjzheng@ntu.edu.sg;Zhuoqing Yang,E-mail:yzhuoqing@sjtu.edu.cn
  • Supported by:
    This work was supported in part by the National Key Research and Development Program of China (2020YFB2008503), Shanghai Non-silicon Micro-nano Integrated Manufacturing Professional Technical Service Platform (No. 20DZ2291300).

Manipulating carrier transport in static Schottky MSM structure via mechanical friction

Yahui Li1,2, Zhiyuan Hu1,3, Han Ren1,4, Yangtao Yu1,3, Mingyu Zhang1,3, Mengqiu Li1,3, Fei Wang5, Sicheng Chen2, Yuanjin Zheng2, Zhuoqing Yang1   

  1. 1. National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai, 200240, China;
    2. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore;
    3. Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China;
    4. Institute for Digital Molecular Analytics and Science (IDMxS), Nanyang Technological University, Singapore, 639798, Singapore;
    5. Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
  • 通讯作者: Sicheng Chen,E-mail:sicheng.chen@ntu.edu.sg;Yuanjin Zheng,E-mail:yjzheng@ntu.edu.sg;Zhuoqing Yang,E-mail:yzhuoqing@sjtu.edu.cn
  • 作者简介:Yahui Li received a Ph.D. degree in electronic science and technology from the Shanghai Jiao Tong University, Shanghai, China, in 2023. He is currently working as a research fellow at Nanyang Technological University, Singapore. His research interests focus on haptic sensorimotor loop systems, Schottky MSM devices, MEMS sensors, and micro-energy harvesting.
    Zhiyuan Hu received his M.S. degree in naval architecture and ocean engineering from Dalian Maritime University and is currently a Ph.D. candidate of electronic science and technology at Shanghai Jiao Tong University. His research interests focus on wireless sensors and MEMS sensors.
    Han Ren received a B.S. degree in chemistry from Nanjing University, Nanjing, China, in 2021, and M.S. degree in electronic science and technology from Shanghai Jiao Tong University, Shanghai, China in 2024. He is currently pursuing a Ph.D. degree at the School of Material Science and Engineering, Nanyang Technological University, Singapore. His research focuses on flexible materials and electronics and exploring their applications in healthcare devices. His research interests also include energy harvesting devices, with a focus on Schottky generators.
    Yangtao Yu received a B.E. degree in electronics packaging technology from Harbin Institute of Technology, and is currently pursuing an M.S. degree at the School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China. His research interests include MEMS sensors and flexible electronics.
    Mingyu Zhang received a B.S. degree in photoelectric device from South China University of Technology, and is currently pursuing an M.S. degree at the School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China. Her research interests include MEMS inertial switches and flexible electronics.
    Mengqiu Li received an M.S. degree in material processing engineering from Harbin Institute of Technology and is currently pursuing a Ph.D. degree with the National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University. Her research mainly focuses on flexible pressure/strain sensors.
    Fei Wang received a bachelor’s degree from University of Science and Technology Beijing, Beijing, China, in 2023, and is currently a master candidate at the School of Materials Science and Engineering, National University of Singapore. Her research interests are smart materials and flexible sensors. Sicheng Chen received a Ph.D. degree from Xi’an Jiaotong University, Xi’an, China, in 2021, and is currently a research fellow at the School of Electrical and Electronic Engineering, Nanyang Technological University. His research includes fundamental and applied aspects of capturing various physical signals using smart electronic sensing systems.
    Yuanjin Zheng (senior member, IEEE) received B.E. and M.E. degrees from Xi’an Jiaotong University, Xi’an, China, in 1993 and 1996, respectively, and a Ph.D. degree from Nanyang Technological University, Singapore, in 2001. In 2001, he joined the Institute of Microelectronics (IME), Agency for Science, Technology and Research, Singapore, where he was a principal investigator and the group leader. In 2009, he joined Nanyang Technological University. He is currently the center director of the VIRTUS IC Design Center of Excellence and the program director of VALENS Bio Instrumentation, Devices and Signal Processing. He has authored or coauthored over 400 international journal and conference papers and several book chapters, and holds 26 patents filed/granted. Dr. Zheng was an Associate Editor of IEEE Transactions on Biomedical Circuits and Systems (IEEE TBio-CAS). He currently serves as an Associate Editor for the IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology (J-ERM).
    Zhuoqing Yang received B.S. and M.S. degrees in electromechanical engineering from Harbin Engineering University (HEU), Harbin, China, in 2003 and 2005, respectively. He received a Ph.D. degree in microelectronics and solid state electronics from Shanghai Jiao Tong University (SJTU), Shanghai, China, in 2010. He stayed at the Research Institute of Micro/Nano Science and Technology at SJTU as an assistant professor, and he spent 2011 through 2013 as a JSPS postdoctoral fellow at the National Institute of Advanced Industrial Science and Technology (AIST) in Japan. Then, he went back to SJTU, where he is currently a full professor at the School of Electronic Information and Electrical Engineering. He is also resident researcher at the National Key Laboratory of Science and Technology on Micro/Nano Fabrication, China. He was the recipient of the Shanghai Municipal Technological Invention Award (1st rank prize) (2016), Outstanding Paper Award of Chinese Mechanical Engineering Society (2008), and Best Paper Award of JCK MEMS/NEMS 2013 Int. Conf. (2013). He was selected as the Shanghai Pujiang Program Talent in 2014. He is also an editorial board member of Micro and Nanosystems (MNS) and Semiconductor Optoelectronics. He has been invited as the TPC members and section chairs for several international conferences (IEEE INEC 2018, IEEE NEMS 2019, etc.) and given keynote/oral presentations. His research interests include MEMS, micro-energy, TSV/TGV package, and flexible electronic devices. He is a senior member of IEEE.
  • 基金资助:
    This work was supported in part by the National Key Research and Development Program of China (2020YFB2008503), Shanghai Non-silicon Micro-nano Integrated Manufacturing Professional Technical Service Platform (No. 20DZ2291300).

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Abstract: Expanding the metal-semiconductor-metal (MSM) structure to encompass a broader range of passive networks is crucial for enhancing the understanding of carrier transport theory and broadening its application scope. Here, a mechanism to modulate the Schottky barrier using mechanical friction is proposed to generate electricity. The findings reveal that contact electrification occurs between the MSM structure and the friction medium, leading to charge redistribution within the system and the application of a bias voltage across the Schottky barrier via a conductive bridge. The conductive friction medium, whether liquid or solid, functions analogously to a conventional physical bias in a Schottky barrier diode, enabling the efficient regulation of the carriers. Aligning the electronegativity of the friction medium with that of the MSM structure, in accordance with the triboelectric sequence, enables the Schottky MSM structure to switch between AC and DC outputs, further validating the proposed carrier transport mechanism. Additionally, we showcase a constant generator composed of a parallel diode array to harvest energy from droplets excitation and the generation of a control signal through solid friction. This work advances the theoretical understanding of the Schottky MSM structure driven by mechanical friction and highlights its potential applications in passive networks.

Key words: Schottky contact, Metal-semiconductor-metal (MSM) structure, Mechanical friction, Triboelectric bias

摘要： Expanding the metal-semiconductor-metal (MSM) structure to encompass a broader range of passive networks is crucial for enhancing the understanding of carrier transport theory and broadening its application scope. Here, a mechanism to modulate the Schottky barrier using mechanical friction is proposed to generate electricity. The findings reveal that contact electrification occurs between the MSM structure and the friction medium, leading to charge redistribution within the system and the application of a bias voltage across the Schottky barrier via a conductive bridge. The conductive friction medium, whether liquid or solid, functions analogously to a conventional physical bias in a Schottky barrier diode, enabling the efficient regulation of the carriers. Aligning the electronegativity of the friction medium with that of the MSM structure, in accordance with the triboelectric sequence, enables the Schottky MSM structure to switch between AC and DC outputs, further validating the proposed carrier transport mechanism. Additionally, we showcase a constant generator composed of a parallel diode array to harvest energy from droplets excitation and the generation of a control signal through solid friction. This work advances the theoretical understanding of the Schottky MSM structure driven by mechanical friction and highlights its potential applications in passive networks.

关键词: Schottky contact, Metal-semiconductor-metal (MSM) structure, Mechanical friction, Triboelectric bias

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