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    GaN-on-diamond technology for next-generation power devices
    Kangkai Fan, Jiachang Guo, Zihao Huang, Yu Xu, Zengli Huang, Wei Xu, Qi Wang, Qiubao Lin, Xiaohua Li, Hezhou Liu, Xinke Liu
    Moore and More    2025, 1 (4): 370-394.   DOI: 10.1007/s44275-024-00022-z
    Abstract (366)      PDF(pc) (3949KB)(802)       Save
    Gallium nitride (GaN)-based power devices have attracted significant attention due to their superior performance in high-frequency and high-power applications. However, the high-power density in these devices often induces severe self-heating effects (SHEs), which degrade their performance and reliability. Traditional thermal management solutions have struggled to efficiently dissipate heat, thereby leading to suboptimal real-world performance compared with theoretical predictions. To address this challenge, diamond has emerged as a highly promising substrate material for GaN devices, primarily due to its exceptional thermal conductivity and mechanical stability. GaN-on-diamond technology has a thermal conductivity of 2 200 W/m/K and it significantly enhances heat dissipation at the chip level. In this review, we provide a systematic overview of the two main integration methods for GaN and diamond: bonding and epitaxial growth techniques. Moreover, we elaborate on the impact of thermal boundary resistance (TBR) at the interface. According to the diffuse mismatch model, the TBR of GaN-on-diamond interfaces can be as low as 3 m2K/GW, which is markedly superior to silicon carbide substrates. In addition, novel techniques such as patterned growth, nanocrystalline diamond (NCD) capping films, and diamond passivation layers have been explored to further enhance thermal management capabilities. We also consider the roles of intermediate dielectric layers in reducing TBR, promoting diamond nucleation, and protecting the GaN layer. Thus, in this review, we summarize the current state of research into GaN-on-diamond technology, highlighting its revolutionary impact on thermal management for power devices and providing new pathways for the development of high-power GaN devices in the future.
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    Advanced growth techniques and challenges in ferroelectric AlScN thin films for next-generation electronic devices
    Xiaoxi Li, Yuan Fang, Yuchun Li, Zhifan Wu, Shuqi Huang, Yingguo Yang, Bitao Dong, Gengsheng Chen, Yue Hao, Genquan Han
    Moore and More    2025, 1 (4): 395-409.   DOI: 10.1007/s44275-024-00021-0
    Abstract (243)      PDF(pc) (6235KB)(155)       Save
    The discovery of ferroelectricity in aluminum scandium nitride (AlScN) thin films has garnered significant research interest, owing to the large remnant polarization, tunable coercive field, excellent thermal stability, high breakdown field, and compatibility with back-end-of-line processes of these thin films. These attributes make AlScN a highly promising candidate for next-generation electronic device applications. Various techniques, such as reactive magnetron sputtering, radiofrequency sputtering, molecular beam epitaxy, metal-organic chemical vapor deposition, and pulsed laser deposition, have been employed to grow ferroelectric AlScN thin films. Critical growth parameters, including deposition atmosphere, precursor selection, and Sc concentration, strongly influence the ferroelectric properties, playing a crucial role in achieving high crystalline quality. This review critically examines the fabrication techniques used for producing ferroelectric AlScN thin films, focusing on the impact of different growth methods and process conditions on their properties. We aim to provide comprehensive guidance to assist future researchers in optimizing their process parameters to achieve the desired ferroelectric characteristics in AlScN thin films.
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    Data encryption based on field effect transistors and memristors
    Rumeng Yang, Huiqian Hu, Jianyuan Zhang, Donghui Wang, Weiguo Huang
    Moore and More    2025, 1 (3): 267-289.   DOI: 10.1007/s44275-024-00011-2
    Abstract (239)      PDF(pc) (8798KB)(228)       Save
    Information security is a critical requirement across military affairs, business, and daily life. Compared to traditional encryption methods, non-volatile memory offers significant advantages for data encryption due to its high-density storage, reliability, rewrite capability, fast data transport, robust handleability, and ease of integration into electrical circuits. This review comprehensively summarizes the latest advancements in functional materials design and fabrication for data storage and encryption. It highlights innovative techniques that leverage the stimulus including optical, electrical, magnetic, and humidity properties, covering both single-stimulus and multi-stimulus synergistic effect. This review also systematically explores notable progress in the field of encryption. Future research directions will focus on developing ultra-low power devices for data encryption, implementing multiple coordinated encryption techniques, and efficiently integrating advanced devices with algorithms to meet evolving security demands. By offering insights into future trends and challenges, this review aims to deepen understanding and inspire innovative perspectives for the ongoing development of advanced encryption devices.
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    Integrated plasmonic ruler using terahertz multi-BIC metasurface for digital biosensing
    Qun Ren, Sheng Jia, Jingtong Li, Liu He, Yan Xu, Hao Huang, Xiaoman Wang, ZherYian Ooi, Yongshan Liang, Yaoyin Zhang, Hang Xu, Zhang Zhang, Jianwei You, Wei E. I. Sha, Jianquan Yao
    Moore and More    2025, 1 (3): 219-231.   DOI: 10.1007/s44275-025-00027-2
    Abstract (221)      PDF(pc) (2424KB)(187)       Save
    In recent years, continuous bound states in the continuum (BIC) have gained significant attention for their practical applications in optics, chip technology, and modern communication. Traditional approaches to realizing and analyzing BIC typically rely on magnetic dipole models, which have limitations in quantitative analysis and integration. This creates a gap in understanding how to efficiently harness BIC with higher Q-factors for enhanced performance in real-world applications, particularly in scenarios involving terahertz imaging and multi-channel communication. In this study, we introduce a novel approach using a metallic resonator model that leverages toroidal dipole moments to generate symmetry-protected BIC with high Q-factors. By systematically varying the asymmetry parameters of the metasurface, we gradually break its symmetry, achieving a transition from the BIC mode to the quasi-BIC mode and facilitating the gradual release of stored electromagnetic energy. Our theoretical analysis confirms the existence and generation of BIC, and experimental measurements of the transmission response spectrum validate these theoretical predictions. The results indicate that terahertz metasurface with high Q-factors can produce strong resonances at specific frequencies, enhancing resistance to electromagnetic interference and ensuring stable imaging quality in complex environments. Additionally, this study suggests the potential for an integrated plasmonic ruler to achieve high-resolution and efficient biological imaging. These findings bridge the gap by demonstrating how high Q-factor BIC can be effectively utilized for multi-channel terahertz dynamic imaging and biosensing applications. This advancement lays a new foundation for developing robust systems in multi-channel communication and biomedical sensing, offering significant potential for future technological and medical innovations.
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    Wearable self-powered devices based on polymer thermoelectric materials
    Yi Yang, Hui Li, Zhen Xu, Siyi Luo, Lidong Chen
    Moore and More    2025, 1 (4): 356-369.   DOI: 10.1007/s44275-024-00020-1
    Abstract (216)      PDF(pc) (2241KB)(35)       Save
    Driven by rapid advances in the thermoelectric (TE) performance of organic materials, conjugated polymer thermoelectric (PTE) materials are considered ideal candidates for flexible self-powered devices because of their intrinsic flexibility, tailored molecular structure, large-area solution processability, and low thermal conductivity. One promising application is the flexible and wearable TE devices used on the human body to convert human energy (human motion or body heat) into electricity. The self-powered character with extended functions allows PTE devices to monitor human activity or health status. In this review, we first introduce existing high-performance PTE materials and the architectures of PTE devices. Then, we focus on the progress of research on flexible self-powered devices based on PTE materials, including TE generators, TE sensors, and Peltier coolers. Finally, possible challenges in the development of PTE devices are discussed.
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    Investigating single-molecule fluorescence quenching and molecular motion dynamics at transparent conductive oxide interfaces
    Zihan Pan, Jin Lu
    Moore and More    2025, 1 (3): 232-240.   DOI: 10.1007/s44275-024-00025-w
    Abstract (209)      PDF(pc) (1725KB)(179)       Save
    The interaction between single-molecule (SM) fluorescence and transparent conductive oxide interface presents unique opportunities for studying molecular motion dynamics and conformational changes. In this study, we investigate the quenching effect of indium-tin oxide (ITO) on SM fluorescence, focusing on the fluorescent dye Cy3 tethered to the 3′-end of single-stranded DNA (ssDNA). By examining the brightness variations of single Cy3 molecules, we are able to distinguish Cy3-ssDNA covalently attached onto the ITO surface from the case of adsorption. Additionally, we can evaluate the molecular motion dynamics of single ssDNA molecules of varying lengths and conformations on the ITO surface. We believe that our findings make significant contributions to the understanding of molecular interactions at ITO interfaces and offer valuable insights into the potential applications of novel fluorophore motion- and orientation-based biosensing strategies.
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    Stability of p-GaN gate AlGaN/GaN HEMTs under static and dynamic drain stress
    Linfei Gao, Xiaohua Li, Wei He, Xinbo Xiong, Huaibao Yan, Hsien-Chin Chiu, Zhanwu Yang, Lixuan Chen, Qiubao Lin, Kaifeng Wang, Hezhou Liu, Xinke Liu
    Moore and More    2025, 1 (3): 290-299.   DOI: 10.1007/s44275-025-00029-0
    Abstract (191)      PDF(pc) (1746KB)(68)       Save
    In this article, we report the investigation into the stability of p-GaN gate high electron mobility transistors (HEMTs) with an internal integrated gate circuit that led to the design of a capacitance-based circuit to address threshold voltage shifts (ΔVTH). Pulse I-V measurement revealed a notable positive gate VTH shift of 0.7 V as the drain voltage increased from 0 to 650 V, highlighting the impact of drain bias on VTH instability. Through the investigation of drain bias-induced VTH instability and the behavior of carriers being transported within the gate region, it was found that the maximum ΔVTH is 0.4 V when a 200-V drain bias is applied; after stress removal, ΔVTH diminishes gradually due to the discharge of capacitance, and holes enter the p-GaN layer to mitigate the depletion of holes. The integration of passive components and p-GaN gate HEMT circuits is suggested to address VTH instability in enhancement-mode HEMT devices. The reliability of power devices is essential for their acceptance in emerging applications.
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    Smart organic crystalline materials based on photo-induced topochemistry
    Yuhui Song, Xiaomin Zhang, Lijian Ning, Qian Zhou, Jinkun Feng, Yanli Wang, Qiuyu Gong, Yinjuan Huang
    Moore and More    2025, 1 (3): 241-266.   DOI: 10.1007/s44275-024-00015-y
    Abstract (181)      PDF(pc) (4720KB)(40)       Save
    Presponsive smart organic crystalline materials (SOCMs) have emerged as an attractive research topic because of their many advantages, such as well-defined structures, high structural order, and the resulting fast response speeds, as well as high energy conversion efficiency and remarkable dynamic optical/electronic changes or mechanical responses. In this review, we discuss the recent developments in SOCMs based on topochemistry beyond coordination compounds, which include [2 + 2] or [4 + 4] photocycloaddition of anthracene and olefin derivatives as well as 1, 4-addition-polymerization of diacetylenes. The detailed design principles and mechanisms associated with smart behavior, photoresponsive physical and chemical properties (i.e., photochromism, photo fluorochromism, and photodeformation), and structure-property relationships are discussed, along with their advanced applications in exciting fields such as intelligent microrobots, encryption, sensors, photoactuators, data storage, and displays. Finally, we summarize the current developments and discuss the major current challenges and future opportunities in this field. We expect that this review will inspire more innovative research into the development of advanced photoresponsive organic smart crystal materials with fast, accurate, and reversible responses, and promote the further development of smart materials and devices.
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    Optimizing bendability of flexible electronic devices using a neutral layer strategy
    Majiaqi Wu, Maoliang Jian, Jianhua Zhang, Lianqiao Yang
    Moore and More    2025, 1 (4): 300-317.   DOI: 10.1007/s44275-024-00019-8
    Abstract (176)      PDF(pc) (2767KB)(251)       Save
    The neutral layer (NL) strategy is a key technique for improving the bendability of flexible electronic devices. In this study, by considering a three-layer structure as an example, the results obtained by finite element analysis (FEA) showed that the NL gradually moved to the top surface of the film as the film thickness and Young’s modulus increased, which are similar to the results produced by theoretical calculations. Subsequently, we optimized the thickness of a single NL structure and the failure bending radius of an indium tin oxide (ITO) electrode was reduced by 50% after optimization. In order to address the problems that affect the design of a single NL, we used optical clear adhesive (OCA) to generate multiple NLs. The FEA method was again applied to the structure and the results showed that decreasing the elastic modulus of the OCA and film thickness could reduce the maximum strain in the film. Finally, the effects of the OCA parameters on the protection of a multiple-layer ITO electrode structure were verified in bending experiments, which showed that the strain on ITO could be reduced from 5.6% to almost 0 in the two-electrode structure. The proposed strategies for designing single and multiple NLs can provide some guidance to facilitate optimizing the electronic infrastructure of flexible devices.
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    Phase change memory programming circuit with improved speed
    Xinyu Yang, Yu Lei, Qiuyao Yu, Qian Wang, Houpeng Chen, Zhitang Song
    Moore and More    2025, 1 (3): 208-218.   DOI: 10.1007/s44275-024-00023-y
    Abstract (174)      PDF(pc) (2295KB)(115)       Save
    Phase change memory (PCM) is considered one of the most promising next-generation non-volatile memory types for storage-class memory due to its many advantages, including ultrafast programming, long data retention, high storage density, low power consumption, and compatibility with standard CMOS processes. However, in conventional PCM programming circuits, the first programming operation after power-on suffers from a slow rise time in the programming pulse due to the lack of bias voltage pre-charging in the current source circuit, which leads to reduced consistency in the programming of phase change cells. In this study, we developed two solutions to address the issue associated with conventional PCM programming circuits. We also analyzed conventional programming circuit schemes and designed a PCM programming circuit with improved speed using the SMIC 40 nm CMOS process. The results demonstrated that compared with conventional programming circuits, the PCM programming circuit with improved speed reduced the rise time of SET pulses from 29.6 ns to 7.3 ns and the rise time of RESET pulses from 13.6 ns to 3.1 ns. In addition, it improved the consistency of the programming phase change cells and reduced the power consumption from 11.93 mW to 10.35 mW.
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    Rationally tailored passivation molecules to minimize interfacial energy loss for efficient perovskite solar cells
    Taoran Geng, Jike Ding, Zuolin Zhang, Mengjia Li, Hongjian Chen, Thierry Pauporté, Rundong Wan, Jiangzhao Chen, Cong Chen
    Moore and More    2025, 1 (4): 327-338.   DOI: 10.1007/s44275-025-00026-3
    Abstract (172)      PDF(pc) (10223KB)(131)       Save
    Labor-intensive, trial-and-error methods are frequently employed for modifying the perovskite surface to mitigate trap defects. There is an urgent need for rationally designed and efficient molecular passivators. To address the performance and stability challenges caused by defects in polycrystalline perovskite, we have rationally designed and tailored passivation molecules, 4-(trifluoromethyl)benzoic anhydride (TFBA), ethyl 4-(trifluoromethyl)benzoate (TFB), and 4-(trifluoromethyl)benzoic acid (PTF), to minimize interfacial energy loss and modulate the bandgap alignment for achieving efficient perovskite solar cells (PSCs). These molecules could target the perovskite surface defects, particularly Pb–I antisite defects, with the –COOH and trifluoromethyl functional groups at the edges. Among them, PTF exhibited superior passivation performance by coordinating its carboxyl group with Pb2+, effectively suppressing non-radiative recombination. Additionally, the fluorine sites in these molecules corrected lattice distortions and stabilized the perovskite structure through hydrogen bonding with MA/FA cations, reducing ion migration, and enhancing moisture resistance. As a result, PTF-modified PSCs achieved an efficiency of 25.57% and maintained over 85% of their initial efficiency after 1 600 h of aging. This study provides a clear pathway for optimizing passivation strategies through rational molecular design.
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    Low-dimensional organic semiconductor crystals for advanced photonics
    Linqing Qiu, Qiang Lv, Xuedong Wang
    Moore and More    2025, 1 (4): 339-355.   DOI: 10.1007/s44275-024-00010-3
    Abstract (165)      PDF(pc) (2948KB)(442)       Save
    In the domain of information processing, communication technology, and computation, the utilization of photons as vectors for information is a critical innovation. Photonic integrated circuits (PICs) are specifically designed to control and transmit light, thereby facilitating the conveyance of data. The recent surge in interest in low-dimensional organic semiconductor crystals is attributed to their unique size-tunable properties and customizable physicochemical characteristics. These features position them as prime candidates for constructing the next generation of high-performance optoelectronic devices. The discourse presented elaborates on the progress in four pivotal areas concerning low-dimensional organic semiconductor crystals: optical generation, optical transportation, optical signal conversion and optical detection. These facets are integral to PICs because they underpin the fundamental mechanisms through which information is transmitted and manipulated via photons. Despite the promising attributes associated with these low-dimensional organic semiconductors, there remain considerable challenges to integrating these materials into the photonic constituents of PICs in a manner that is both effective and scalable. The text culminates with a concise summary and a forward-looking perspective on the potential applications and future development of low-dimensional organic semiconductor crystals within the sphere of advanced photonics. This outlook considers ongoing research and the anticipated breakthroughs that could further enhance the role of these materials in the evolution of photonic technologies.
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    Mitigating interfacial carrier crowding by an ultrathin LiF interlayer towards efficient and stable perovskite light-emitting diodes
    Xiaofei Zhang, Lin Wang, Lingmei Kong, Sheng Wang, Jun Dai, Guohua Jia, Xuyong Yang
    Moore and More    2025, 1 (3): 199-207.   DOI: 10.1007/s44275-024-00018-9
    Abstract (164)      PDF(pc) (2225KB)(115)       Save
    Quasi-two-dimensional (quasi-2D) perovskite-based light-emitting diodes (PeLEDs) have attracted intensive attention due to their high quantum yields, tunable emission wavelengths, and solution-processing capability, showing great potential in next-generation display and lighting applications. However, further performance enhancement in PeLEDs is severely limited by the uncontrolled transfer of charge carriers under bias, leading to crowding of interfacial carriers and severe efficiency roll-off. Herein, we insert an ultra-thin dielectric buffer layer of lithium fluoride (LiF) into the electron transport layer (ETL) to regulate the transfer dynamics of electrons and passivate the interfacial defects simultaneously. The dielectric LiF interlayer can effectively reduce the efficiency roll-off in PeLEDs by improving the charge balance through preventing the overwhelming injection of electrons. Moreover, the fluoride anions from LiF can passivate the surface defects of the perovskite film, enhancing the radiative recombination. As a result, the LiF interlayer-assisted quasi-2D PeLED presents an outstanding external quantum efficiency (EQE) of 24.03% and a maximum brightness of 30 845 cd m-2. The operational stability of the device is also extended, with a half-lifetime (T50) of 71.28 min (at an initial luminance of 1 000 cd m-2), which is 7.4-fold longer than that for the control device.
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    Flower-like GO-MoS2 SERS platform for sensitive quantification of cortisol
    Wenmiao Yu, Xuan Xu, Tingting Zheng
    Moore and More    2025, 1 (4): 318-326.   DOI: 10.1007/s44275-024-00024-x
    Abstract (140)      PDF(pc) (2699KB)(173)       Save
    Mental stress is a dangerous factor for the health of living beings, which can lead to various diseases. However, currently, there is a lack of diagnostic tools that can quickly and accurately quantify levels of mental stress. Cortisol is an important stress hormone that is widely present in bodily fluids; its concentration can reflect the level of mental stress in organisms. Here, we report a surface-enhanced Raman spectroscopy (SERS) probe based on flower-like graphene oxide-molybdenum disulfide composite material functionalized with cortisol DNA recognition element and tetracyanoquinodimethane of Raman label, with a remarkable enhancement factor value of 7.38 × 105, which exhibits excellent cortisol detection ability in a wide range of concentrations from 1 nM to 1 000 nM, with the limit of detection down to 0.773 nM. The whole detection takes only 20 min. In addition, the SERS probe can selectively detect cortisol in other substances with similar chemical structures, which makes the probe applicable to complex biological systems with good reproducibility and stability. This designed SERS probe has been successfully employed in the detection of mouse serum cortisol, with high accuracy compared with enzyme-linked immunosorbent assay (ELISA) results, demonstrating great potential in actual biological sample detection.
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    Recent advances in CRISPR- and RCA-based biosensing chips and devices for POCT and in situ detection
    Yuming Huang, Tianyi Yin, Yuhao Wen, Shenye Qian, Yuanjie Wu, Xingkai Hao, Wen Chen, Bing Li, Zhengdong Li, Sami Ramadan, Lizhou Xu
    Moore and More    2026, 2 (1): 84-114.   DOI: 10.1007/s44275-025-00038-z
    Abstract (81)   HTML (8)    PDF(pc) (4155KB)(43)       Save

    The synergy of clustered regularly interspaced short palindromic repeats (CRISPR) and rolling circle amplification (RCA) has been considered the cutting edge of molecular diagnostics. These biosensing assays, integrated with other techniques, are widely used in various biosensors for the detection of multiple targets, including nucleic and non-nucleic acid targets. Some biosensing platforms have demonstrated detection performance comparable to that of the gold standard techniques, showing the potential for application in the field of point-of-care testing (POCT). Herein, we review the recent advances over the past 5 years in CRISPR- and RCA-based biosensing chips and devices, with a focus on their implementation in POCT and in situ applications. We classify these systems based on target type, compare their performance metrics, and discuss key technological features. Based on relevant commercial products, we also outline the current challenges that these biosensors may face during commercialization and propose some potential solutions and future research directions.

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    Integrated multi-functional silicon photonic engine for long-range FMCW laser ranging
    Jing Wang, Lin Zhu, Yan Zuo, De Zhou, Rui Zhu, Hongsong Xu, Hao Wang, Xiong Jiang, Zhiheng Yue, Daohui Pan, Qifeng Liu, Dechuan Zhang
    Moore and More    2026, 2 (1): 46-56.   DOI: 10.1007/s44275-025-00030-7
    Abstract (79)   HTML (4)    PDF(pc) (2996KB)(12)       Save

    We present an integrated multi-functional silicon photonic engine tailored specifically for long-range frequency-modulated continuous-wave (FMCW) laser ranging systems. The engine integrates a parallel four-channel dual-polarization coherent detection module, an on-chip optical splitting system, a laser nonlinearity calibration module utilizing a large-scale optical delay line (DL), and an on-chip local light optical splitting unit on a single chip. Key components, including germanium-silicon photodetectors, were optimized to achieve high responsivity (1.09 A/W) and low dark current (3.6 nA). The on-chip delay line design achieves an optical time delay of 5.74 ns with improved loss, enabling nonlinearity calibration that enhances signal-to-noise ratio (SNR) and spectrum linewidth. The packaged silicon photonic engine, with a chip size of 2.8 mm × 2.7 mm, demonstrates ranging capabilities up to 200 m with SNR exceeding 10 dB across all four channels. This study represents a new integration solution for the FMCW laser ranging system, providing a robust platform for automotive and other high-precision ranging applications.

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    Van der Waals heterojunctions of 2D organic–inorganic materials for high-performance photodetectors
    Hongsong Liu, Cong Peng, Zhihao Huang, Cong Zhang, Guangxin Sun, Shuangqing Fan, Cong Wang, Beibei Fu
    Moore and More    2026, 2 (1): 57-83.   DOI: 10.1007/s44275-025-00033-4
    Abstract (73)   HTML (3)    PDF(pc) (8193KB)(17)       Save

    Two-dimensional (2D) organic–inorganic van der Waals heterojunctions (vdWHs) represent an emerging class of materials that could combine the characteristic structures and outstanding properties of both 2D materials and organic–inorganic components within a single composite, providing an ideal platform for broader, superior, and on-demand functional applications. Particularly, the use of 2D organic–inorganic vdWHs with different photosensitive materials and photonic structures plays a critical role in optimizing the photodetection and modulation efficiency, opening new avenues for designing and developing advanced optoelectronic devices. In recent years, great progress has been made in photodetectors based on the 2D organic–inorganic vdWHs, and this review aims to offer a timely overview of this evolving field. First, a survey of 2D inorganic and organic materials that prototypically are used for the fabrication of vdWHs, and then the fabrication approaches toward advanced 2D organic–inorganic vdWHs are highlighted. Following this, 2D organic–inorganic vdWH-based photodetectors and their potential applications are described. Finally, the frontier challenges and perspectives associated with the 2D organic–inorganic vdWHs are presented, in the hope of providing guidance for future research.

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    Evaluating the protective efficacy of polymer encapsulation layer for perovskite solar cells under space radiation exposure
    Hongkai Zhang, Kang Wei, Guodong Zhang, Yuqing Yue, Yuchuan Shao, Bin Wei, Wei Shi, Yifan Zheng
    Moore and More    2026, 2 (1): 15-24.   DOI: 10.1007/s44275-025-00031-6
    Abstract (71)   HTML (2)    PDF(pc) (3160KB)(15)       Save

    Flexible perovskite solar cells (FPSCs) have demonstrated considerable potential as a next-generation photovoltaic technology for space applications. However, their performance stability in space radiation environments remains a critical challenge. This paper proposes a performance evaluation strategy for FPSCs subjected to space irradiation damage. This strategy integrates a radiation damage model with a multi-physics field-coupled optoelectronic device performance simulation methodology, systematically assessing the protective efficacy of four commonly utilized polymer encapsulants under low Earth orbit proton radiation exposure. The results show that polyimide (PI) is better at blocking protons at all energy levels, making it the best encapsulation material for FPSCs. Furthermore, COMSOL fitting calculations reveal that PI-encapsulated devices exhibit sustained high performance following radiation exposure, underscoring their remarkable stability in terms of opto-electronic performance. This study provides a robust theoretical foundation and technical support for the protective design of spacecraft components and serves as a significant reference for the selection of appropriate encapsulation materials for future space applications.

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    DA: towards distribution adaptive test-time adaptation in dynamic wild world
    Zhendong Liu, Jiarong Liao, Chuyang Ye, Dongyan Wei, Tingting Zhang, Xianghua Fu, Jingyan Jiang
    Moore and More    2026, 2 (1): 25-36.   DOI: 10.1007/s44275-025-00035-2
    Abstract (55)   HTML (4)    PDF(pc) (1647KB)(15)       Save

    Test-time adaptation (TTA) has demonstrated effectiveness in addressing distribution shifts between training and testing data by adjusting a given model on test samples. However, when faced with testing data that exhibit dynamic patterns, wherein a single test sample batch is drawn from various distribution, the traditional TTA methods, which typically follow a fixed pattern of estimating batch normalization (BN) statistics and then performing back-propagation, tend to experience performance degradation. The key reasons we observed are as follows: (i) different scenarios require different normalization approaches (such as instance normalization (IN) is optimal in mixture domains, but not for static domains) and (ii) back-propagation could potentially degrade the model and waste time. Based on these observations, in this paper, we introduce a novel one-size-fits-all approach, named distribution adaptive test-time adaptation (DA). DA is designed to adaptively select the appropriate batch normalization method and back-propagation approach. It utilizes an IN–based projection method to differentiate between various scenarios. Our method allows the model to achieve a more robust representation, enabling it to adapt effectively to both static and dynamic data patterns. Furthermore, our method avoids unnecessary or potentially harmful backward passes, paving the way for further enhancements. The results show that our method demonstrates robustness while maintaining good performance of the model. It can effectively respond to data stream patterns, and the selective back-propagation approach is more lightweight.

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    Ferroelectric behavior of E-beam evaporated ­Hf0.5Zr0.5O2 thin film and integration with GaN HEMTs toward programmable current switching
    Fang Ye, Huaxin Shen, Sitong Chen, Tian Luo, Fanping Meng, Jie Lin, Li Chen, Zixian Jiang, Xiaohang Li, Jichun Ye, Wei Guo
    Moore and More    2026, 2 (1): 37-45.   DOI: 10.1007/s44275-025-00039-y
    Abstract (51)   HTML (9)    PDF(pc) (2773KB)(28)       Save

    This letter demonstrates an AlGaN/GaN high-electron-mobility transistors (HEMTs) incorporating a ­Hf 0.5Zr 0.5O 2 (HZO)/Al 2O 3 ferroelectric gate dielectric fabricated via electron-beam evaporation (E-beam) technique. Through precise control of HZO growth processes and post-annealing treatments, high-quality ferroelectric thin films were obtained, acting as the gate dielectric, enabling an ultra-high current on/off ratio of ­10 8, a low subthreshold slope (SS) of 64.4 mV/dec, and a wide tuning range of the threshold voltage (V TH). Our work indicates that ferroelectric polarization significantly influences electron transport behavior at the AlGaN/GaN interface, highlighting the potential of E-beam evaporated HZO thin film used in the application of next-generation power electronic systems.

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