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Impact of the alkyl side-chain length on solubility, interchain packing, and charge-transport properties of amorphous π-conjugated polymers Qingqing Dai, Xingyou Lang, Jean-Luc Brédas, Tonghui Wang, Qing Jiang Moore and More    2025, 1 (1): 16-25.   DOI: 10.1007/s44275-024-00008-x Abstract （75）      PDF（pc） （2759KB）（111）       Knowledge map    Save Increasing the length of alkyl side chains is a typical way to improve the solubility of π-conjugated polymers designed for use in solution-processed devices. However, these modifications have also been reported to alter the film morphology. Given that the mechanism leading to improved solubility is not well documented yet and the nanoscale (local) morphologies of amorphous π-conjugated polymer films are difficult to characterize experimentally, here, we combine molecular dynamics simulations and long-range corrected density functional theory calculations to examine at the molecular scale the impact that the alkyl side-chain length has on polymer solubility and film morphologies. As a representative example, we consider poly(thieno[3,4-c]pyrrole-4,6-dione-alt-3,4-difluorothiophene) (PTPD[2F]T) with two different lengths of the alkyl side chains on the thieno[3,4-c]pyrrole-4,6-dione (TPD) moieties, i.e., 2-hexyldecyl (2HD) and 2-decyltetradecyl (2DT). A detailed analysis of polymer-solvent and polymer-polymer interactions provides a picture that describes the underlying mechanism for improved solubility in going from 2HD to 2DT. We then underline an intrinsic characteristic that decreasing the side-chain length brings a greater extent of backbone planarity and lesser side chain-TPD interactions, which leads to higher interchain π-π packing density and order, while the interchain π-π packing patterns remain similar in the two films. These morphologies are discussed in terms of the charge-transport properties between neighboring PTPD[2F]T chains, which point to a higher electron mobility in the PTPD[2F]T films with shorter alkyl side chains. Overall, our findings offer guidance in the field of solution-processed electronic devices by pointing out that the polymer alkyl side-chain length could be minimized to improve carrier mobility while ensuring polymer solubility. Reference | Related Articles | Metrics | Comments（0）

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Low-dimensional organic semiconductor crystals for advanced photonics Linqing Qiu, Qiang Lv, Xuedong Wang Moore and More    2025, 1 (4): 339-355.   DOI: 10.1007/s44275-024-00010-3 Abstract （59）      PDF（pc） （2948KB）（88）       Knowledge map    Save In the domain of information processing, communication technology, and computation, the utilization of photons as vectors for information is a critical innovation. Photonic integrated circuits (PICs) are specifically designed to control and transmit light, thereby facilitating the conveyance of data. The recent surge in interest in low-dimensional organic semiconductor crystals is attributed to their unique size-tunable properties and customizable physicochemical characteristics. These features position them as prime candidates for constructing the next generation of high-performance optoelectronic devices. The discourse presented elaborates on the progress in four pivotal areas concerning low-dimensional organic semiconductor crystals: optical generation, optical transportation, optical signal conversion and optical detection. These facets are integral to PICs because they underpin the fundamental mechanisms through which information is transmitted and manipulated via photons. Despite the promising attributes associated with these low-dimensional organic semiconductors, there remain considerable challenges to integrating these materials into the photonic constituents of PICs in a manner that is both effective and scalable. The text culminates with a concise summary and a forward-looking perspective on the potential applications and future development of low-dimensional organic semiconductor crystals within the sphere of advanced photonics. This outlook considers ongoing research and the anticipated breakthroughs that could further enhance the role of these materials in the evolution of photonic technologies. Reference | Related Articles | Metrics | Comments（0）

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Optimizing bendability of flexible electronic devices using a neutral layer strategy Majiaqi Wu, Maoliang Jian, Jianhua Zhang, Lianqiao Yang Moore and More    2025, 1 (4): 300-317.   DOI: 10.1007/s44275-024-00019-8 Abstract （56）      PDF（pc） （2767KB）（87）       Knowledge map    Save The neutral layer (NL) strategy is a key technique for improving the bendability of flexible electronic devices. In this study, by considering a three-layer structure as an example, the results obtained by finite element analysis (FEA) showed that the NL gradually moved to the top surface of the film as the film thickness and Young’s modulus increased, which are similar to the results produced by theoretical calculations. Subsequently, we optimized the thickness of a single NL structure and the failure bending radius of an indium tin oxide (ITO) electrode was reduced by 50% after optimization. In order to address the problems that affect the design of a single NL, we used optical clear adhesive (OCA) to generate multiple NLs. The FEA method was again applied to the structure and the results showed that decreasing the elastic modulus of the OCA and film thickness could reduce the maximum strain in the film. Finally, the effects of the OCA parameters on the protection of a multiple-layer ITO electrode structure were verified in bending experiments, which showed that the strain on ITO could be reduced from 5.6% to almost 0 in the two-electrode structure. The proposed strategies for designing single and multiple NLs can provide some guidance to facilitate optimizing the electronic infrastructure of flexible devices. Reference | Related Articles | Metrics | Comments（0）

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GaN-on-diamond technology for next-generation power devices Kangkai Fan, Jiachang Guo, Zihao Huang, Yu Xu, Zengli Huang, Wei Xu, Qi Wang, Qiubao Lin, Xiaohua Li, Hezhou Liu, Xinke Liu Moore and More    2025, 1 (4): 370-394.   DOI: 10.1007/s44275-024-00022-z Abstract （104）      PDF（pc） （3949KB）（37）       Knowledge map    Save Gallium nitride (GaN)-based power devices have attracted significant attention due to their superior performance in high-frequency and high-power applications. However, the high-power density in these devices often induces severe self-heating effects (SHEs), which degrade their performance and reliability. Traditional thermal management solutions have struggled to efficiently dissipate heat, thereby leading to suboptimal real-world performance compared with theoretical predictions. To address this challenge, diamond has emerged as a highly promising substrate material for GaN devices, primarily due to its exceptional thermal conductivity and mechanical stability. GaN-on-diamond technology has a thermal conductivity of 2 200 W/m/K and it significantly enhances heat dissipation at the chip level. In this review, we provide a systematic overview of the two main integration methods for GaN and diamond: bonding and epitaxial growth techniques. Moreover, we elaborate on the impact of thermal boundary resistance (TBR) at the interface. According to the diffuse mismatch model, the TBR of GaN-on-diamond interfaces can be as low as 3 m2K/GW, which is markedly superior to silicon carbide substrates. In addition, novel techniques such as patterned growth, nanocrystalline diamond (NCD) capping films, and diamond passivation layers have been explored to further enhance thermal management capabilities. We also consider the roles of intermediate dielectric layers in reducing TBR, promoting diamond nucleation, and protecting the GaN layer. Thus, in this review, we summarize the current state of research into GaN-on-diamond technology, highlighting its revolutionary impact on thermal management for power devices and providing new pathways for the development of high-power GaN devices in the future. Reference | Related Articles | Metrics | Comments（0）

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Accurate and efficient evaluation of the ionization potentials of extreme ultraviolet photoresists using density functionals and semi-empirical methods Kun Du, Jiafeng Ying, Lixin Han, Jie Xue, Hanshen Xin, Jianhua Zhang, Haoyuan Li Moore and More    2025, 1 (2): 102-113.   DOI: 10.1007/s44275-024-00002-3 Abstract （84）      PDF（pc） （8406KB）（28）       Knowledge map    Save Extreme ultraviolet (EUV) photoresists have become the core materials in lithography with nanometer-sized patterns and are actively explored on the path to realizing smaller critical dimensions. These photoresists can be small molecule-, polymer-, or organic–inorganic hybrid-based, with the full molecular working mechanism under investigation. For the rational design of EUV photoresists, theoretical guidance using tools like first-principle calculations and multi-scale simulations can be of great help. Considering the extremely high standard of accuracy in EUV lithography, it is critical to ensure the adoption of the appropriate methodologies in the theoretical evaluation of EUV photoresists. However, it is known that density functionals and semi-empirical methods differ in accuracy and efficiency, without a universal rule across materials. This poses a challenge in developing a reliable theoretical framework for calculating EUV photoresists. Here, we present a benchmark investigation of density functionals and semi-empirical methods on the three main types of EUV photoresists, focusing on the ionization potential, a key parameter in their microscopic molecular reactions. The vertical detachment energies (VDE) and adiabatic detachment energies (ADE) were calculated using 12 functionals, including pure functionals, hybrid functionals, Minnesota functionals, and the recently developed optimally tuned range-separated (OTRS) functionals. Several efficient semi-empirical methods were also chosen, including AM1, PM6, PM7, and GFN1-xTB in the extended tight-binding theoretical framework. These results guide the accurate and efficient calculation of EUV photoresists and are valuable for the development of multi-scale lithography protocols. Reference | Related Articles | Metrics | Comments（0）

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Moore icon: an interview with Prof. Hanming Wu—challenges and opportunities in the post-Moore era Lin Jiang, Mengjiao Li, Hanming Wu Moore and More    2025, 1 (1): 1-4.   DOI: 10.1007/s44275-024-00003-2 Abstract （59）      PDF（pc） （1698KB）（23）       Knowledge map    Save Related Articles | Metrics | Comments（0）

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Interview with Professor Jianhua Zhang, Editor-in-Chief of Moore and More Lin Jiang, Yi Li, Jianhua Zhang Moore and More    2025, 1 (2): 99-101.   DOI: 10.1007/s44275-024-00004-1 Abstract （70）      PDF（pc） （1104KB）（20）       Knowledge map    Save Related Articles | Metrics | Comments（0）

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Band engineering in two-dimensional porphyrin- and phthalocyanine-based covalent organic frameworks: insight from molecular design Xiaojuan Ni, Jean-Luc Brédas Moore and More    2025, 1 (1): 26-39.   DOI: 10.1007/s44275-024-00007-y Abstract （75）      PDF（pc） （11883KB）（18）       Knowledge map    Save Two-dimensional covalent organic frameworks (2D COFs) represent an emerging class of crystalline polymeric networks, characterized by their tunable architectures and porosity, synthetic adaptability, and interesting optical, magnetic, and electrical properties. The incorporation of porphyrin (Por) or phthalocyanine (Pc) core units into 2D COFs provides an ideal platform for exploring the relationship between the COF geometric structure and its electronic properties in the case of tetragonal symmetry. In this work, on the basis of tight-binding models and density functional theory calculations, we describe the generic types of electronic band structures that can arise in tetragonal COFs. Three tetragonal lattice symmetries are examined: the basic square lattice, the Lieb lattice, and the checkerboard lattice. The potential topological characteristics of each lattice are explored. The Por-/Pc-based COFs exhibit characteristic band dispersions that are directly linked to their lattice symmetries and the nature of the frontier molecular orbitals of their building units. We show that the band dispersions in these COFs can be tailored by choosing specific symmetries of the molecular building units and/or by modulating the relative energies of the core and linker units. These strategies can be extended to a wide array of COFs, offering an effective approach to engineering their electronic properties. Reference | Related Articles | Metrics | Comments（0）

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Evaluating the potential of two-dimensional materials for innovations in multifunctional electrochromic biochemical sensors: a review Nadia Anwar, Guangya Jiang, Yi Wen, Muqarrab Ahmed, Haodong Zhong, Shen Ao, Zehui Li, Yunhan Ling, Grégory F. Schneider, Wangyang Fu, Zhengjun Zhang Moore and More    2025, 1 (2): 171-194.   DOI: 10.1007/s44275-024-00013-0 Abstract （76）      PDF（pc） （33054KB）（16）       Knowledge map    Save In this review, the current advancements in electrochromic sensors based on two-dimensional (2D) materials with rich chemical and physical properties are critically examined. By summarizing the current trends in and prospects for utilizing multifunctional electrochromic devices (ECDs) in environmental monitoring, food quality control, medical diagnosis, and life science-related investigations, we explore the potential of using 2D materials for rational design of ECDs with compelling electrical and optical properties for biochemical sensing applications. Reference | Related Articles | Metrics | Comments（0）

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Rationally tailored passivation molecules to minimize interfacial energy loss for efficient perovskite solar cells Taoran Geng, Jike Ding, Zuolin Zhang, Mengjia Li, Hongjian Chen, Thierry Pauporté, Rundong Wan, Jiangzhao Chen, Cong Chen Moore and More    2025, 1 (4): 327-338.   DOI: 10.1007/s44275-025-00026-3 Abstract （57）      PDF（pc） （10223KB）（13）       Knowledge map    Save Labor-intensive, trial-and-error methods are frequently employed for modifying the perovskite surface to mitigate trap defects. There is an urgent need for rationally designed and efficient molecular passivators. To address the performance and stability challenges caused by defects in polycrystalline perovskite, we have rationally designed and tailored passivation molecules, 4-(trifluoromethyl)benzoic anhydride (TFBA), ethyl 4-(trifluoromethyl)benzoate (TFB), and 4-(trifluoromethyl)benzoic acid (PTF), to minimize interfacial energy loss and modulate the bandgap alignment for achieving efficient perovskite solar cells (PSCs). These molecules could target the perovskite surface defects, particularly Pb–I antisite defects, with the –COOH and trifluoromethyl functional groups at the edges. Among them, PTF exhibited superior passivation performance by coordinating its carboxyl group with Pb2+, effectively suppressing non-radiative recombination. Additionally, the fluorine sites in these molecules corrected lattice distortions and stabilized the perovskite structure through hydrogen bonding with MA/FA cations, reducing ion migration, and enhancing moisture resistance. As a result, PTF-modified PSCs achieved an efficiency of 25.57% and maintained over 85% of their initial efficiency after 1 600 h of aging. This study provides a clear pathway for optimizing passivation strategies through rational molecular design. Reference | Related Articles | Metrics | Comments（0）

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Moore and More    2023, 1 (1): 1-.   Abstract （225）            Knowledge map    Save Related Articles | Metrics | Comments（0）

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Manipulating carrier transport in static Schottky MSM structure via mechanical friction Yahui Li, Zhiyuan Hu, Han Ren, Yangtao Yu, Mingyu Zhang, Mengqiu Li, Fei Wang, Sicheng Chen, Yuanjin Zheng, Zhuoqing Yang Moore and More    2025, 1 (1): 5-15.   DOI: 10.1007/s44275-024-00012-1 Abstract （76）      PDF（pc） （7729KB）（13）       Knowledge map    Save Expanding the metal-semiconductor-metal (MSM) structure to encompass a broader range of passive networks is crucial for enhancing the understanding of carrier transport theory and broadening its application scope. Here, a mechanism to modulate the Schottky barrier using mechanical friction is proposed to generate electricity. The findings reveal that contact electrification occurs between the MSM structure and the friction medium, leading to charge redistribution within the system and the application of a bias voltage across the Schottky barrier via a conductive bridge. The conductive friction medium, whether liquid or solid, functions analogously to a conventional physical bias in a Schottky barrier diode, enabling the efficient regulation of the carriers. Aligning the electronegativity of the friction medium with that of the MSM structure, in accordance with the triboelectric sequence, enables the Schottky MSM structure to switch between AC and DC outputs, further validating the proposed carrier transport mechanism. Additionally, we showcase a constant generator composed of a parallel diode array to harvest energy from droplets excitation and the generation of a control signal through solid friction. This work advances the theoretical understanding of the Schottky MSM structure driven by mechanical friction and highlights its potential applications in passive networks. Reference | Related Articles | Metrics | Comments（0）

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Integrated plasmonic ruler using terahertz multi-BIC metasurface for digital biosensing Qun Ren, Sheng Jia, Jingtong Li, Liu He, Yan Xu, Hao Huang, Xiaoman Wang, ZherYian Ooi, Yongshan Liang, Yaoyin Zhang, Hang Xu, Zhang Zhang, Jianwei You, Wei E. I. Sha, Jianquan Yao Moore and More    2025, 1 (3): 219-231.   DOI: 10.1007/s44275-025-00027-2 Abstract （104）      PDF（pc） （2424KB）（12）       Knowledge map    Save In recent years, continuous bound states in the continuum (BIC) have gained significant attention for their practical applications in optics, chip technology, and modern communication. Traditional approaches to realizing and analyzing BIC typically rely on magnetic dipole models, which have limitations in quantitative analysis and integration. This creates a gap in understanding how to efficiently harness BIC with higher Q-factors for enhanced performance in real-world applications, particularly in scenarios involving terahertz imaging and multi-channel communication. In this study, we introduce a novel approach using a metallic resonator model that leverages toroidal dipole moments to generate symmetry-protected BIC with high Q-factors. By systematically varying the asymmetry parameters of the metasurface, we gradually break its symmetry, achieving a transition from the BIC mode to the quasi-BIC mode and facilitating the gradual release of stored electromagnetic energy. Our theoretical analysis confirms the existence and generation of BIC, and experimental measurements of the transmission response spectrum validate these theoretical predictions. The results indicate that terahertz metasurface with high Q-factors can produce strong resonances at specific frequencies, enhancing resistance to electromagnetic interference and ensuring stable imaging quality in complex environments. Additionally, this study suggests the potential for an integrated plasmonic ruler to achieve high-resolution and efficient biological imaging. These findings bridge the gap by demonstrating how high Q-factor BIC can be effectively utilized for multi-channel terahertz dynamic imaging and biosensing applications. This advancement lays a new foundation for developing robust systems in multi-channel communication and biomedical sensing, offering significant potential for future technological and medical innovations. Reference | Related Articles | Metrics | Comments（0）

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Lithium niobate/lithium tantalate single-crystal thin films for post-moore era chip applications Yixin Zhu, Qing Wan Moore and More    2025, 1 (1): 62-78.   DOI: 10.1007/s44275-024-00005-0 Abstract （94）      PDF（pc） （18215KB）（12）       Knowledge map    Save Lithium niobate (LiNbO3) and lithium tantalate (LiTaO3) are a class of multifunctional materials with excellent piezoelectric/ferroelectric, electro-optic, and nonlinear optical properties, which have wide applications in high-performance radio frequency filters, optical communications, integrated photonics, quantum information, and other fields. With the advent of the post-Moore era of integrated circuit technology, LiNbO3/LiTaO3 thin-film also shows great potential and advantages in new concept chip applications. High-quality single-crystal thin films lay the foundation for high-performance radio frequency, optoelectronic, and quantum devices and their integration. This review first introduces the main characteristics of LiNbO3/LiTaO3 single-crystal thin films, such as ferroelectricity, piezoelectricity, electro-optic effect and nonlinear optical effect, then introduces the preparation methods of LiNbO3/LiTaO3 single-crystal thin films represented by smart-cut and their application progress in different fields such as waveguides, modulators, laterally excited bulk acoustic wave resonators, and quantum devices. The application prospects and challenges of LiNbO3/LiTaO3 single-crystal thin films in post-Moore era chips are also discussed in this article, aiming to provide valuable references for their development and application. Reference | Related Articles | Metrics | Comments（0）

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Design and implementation of a scalable and high-throughput EEG acquisition and analysis system Haifeng Liu, Zhenghang Zhu, Zhenyu Wang, Xi Zhao, Tianheng Xu, Ting Zhou, Celimuge Wu, Edison Pignaton De Freitas, Honglin Hu Moore and More    2025, 1 (2): 114-133.   DOI: 10.1007/s44275-024-00017-w Abstract （93）      PDF（pc） （16331KB）（11）       Knowledge map    Save Recent advances in neuroscience, neuromorphic intelligence, and brain–computer interface (BCI) technologies have created a need for fast, efficient, and convenient electroencephalogram (EEG) data acquisition systems. However, the existing equipment was limited in its flexibility, restricting non-invasive studies to research or medical settings. To address this issue, low-cost, compact EEG acquisition devices have been developed, allowing for frequent and flexible brain data acquisition in various scenarios. This paper introduces a scalable and high-throughput EEG signal acquisition and analysis system based on field-programmable gate array (FPGA) technology. The proposed system offers electrode scalability, on-chip computing, and optional wireless functionality extension. These features are achieved through the design of a highly scalable underlying EEG acquisition module and an FPGA central module that enables software-defined high-throughput expansion and high-speed data exchange between software and hardware. The paper presents two implementation cases that demonstrate the potential of the proposed system. The first case introduces a wearable wireless EEG system, enabling the deployment of effective and user-friendly steady-state visual evoked potential (SSVEP)-BCI applications in consumer-grade scenarios. The second case integrates an FPGA central module with multiple basic EEG acquisition modules to construct a high-throughput BCI system for cost-effective and real-time EEG data acquisition and processing. This configuration allows for flexible deployment in research and clinical applications, including attention index, SSVEP, motor imagery (MI), and emotion recognition. This combination further demonstrates the potential of scalable EEG systems and emphasizes the need for further integration or chipization. These implementations validate the feasibility of compact and efficient EEG devices and highlight the promising applications of scalable BCI system in various fields. Reference | Related Articles | Metrics | Comments（0）

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Manufacturing carbon nanotube transistors using lift-off process: limitations and prospects Xilong Gao, Jia Si, Zhiyong Zhang Moore and More    2025, 1 (2): 195-198.   DOI: 10.1007/s44275-024-00016-x Abstract （61）      PDF（pc） （6212KB）（11）       Knowledge map    Save Carbon nanotube field-effect transistors (CNT FETs) are regarded as promising candidates for next-generation energy-efficient computing systems. While research has employed the lift-off process to demonstrate the performance of CNT FETs, this method now poses challenges for enhancing individual FET performance and is not suitable for scalable fabrication. In this paper, we summarize the limitations of the lift-off process and point out that future advancements in manufacturing techniques should prioritize the development of etching processes. Reference | Related Articles | Metrics | Comments（0）

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Flexible neuromorphic transistors for neuromorphic computing and perception application Shuo Ke, Yixin Zhu, Chuanyu Fu, Huiwu Mao, Kailu Shi, Lesheng Qiao, Qing Wan Moore and More    2025, 1 (2): 147-170.   DOI: 10.1007/s44275-024-00009-w Abstract （85）      PDF（pc） （25722KB）（10）       Knowledge map    Save Emulating brain functionality with neuromorphic devices is an emerging field of research. It is extensively considered as the first step to overcome the limitations of conventional von Neumann systems and build artificial intelligent systems. Currently, most neuromorphic transistors are manufactured on rigid substrates, which are difficult to bend and cannot closely fit soft human skin, limiting their appliction scope. The emergence and evolution of flexible electronic devices address a plethora of application and scenario demands. Particularly, the introduction of flexible neuromorphic transistors injects fresh vitality into neuromorphic computing and perception, symbolizing a significant step towards overcoming the limitations of conventional computational models and fostering the development of more intelligent wearable devices. Herein, the recent developments in felxible neuromorphic transistors are summarized and their applications in neuromorphic computing and artificial perception systems are highlighted. The future prospects and challenges of felxible neuromorphic transistors are also discussed. We believe developments in felxible neuromorphic transistors will shed light on future advances in wearable artificial intelligent systems, humanoid robotics and neural repair technology. Reference | Related Articles | Metrics | Comments（0）

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Flower-like GO-MoS2 SERS platform for sensitive quantification of cortisol Wenmiao Yu, Xuan Xu, Tingting Zheng Moore and More    2025, 1 (4): 318-326.   DOI: 10.1007/s44275-024-00024-x Abstract （53）      PDF（pc） （2699KB）（10）       Knowledge map    Save Mental stress is a dangerous factor for the health of living beings, which can lead to various diseases. However, currently, there is a lack of diagnostic tools that can quickly and accurately quantify levels of mental stress. Cortisol is an important stress hormone that is widely present in bodily fluids; its concentration can reflect the level of mental stress in organisms. Here, we report a surface-enhanced Raman spectroscopy (SERS) probe based on flower-like graphene oxide-molybdenum disulfide composite material functionalized with cortisol DNA recognition element and tetracyanoquinodimethane of Raman label, with a remarkable enhancement factor value of 7.38 × 105, which exhibits excellent cortisol detection ability in a wide range of concentrations from 1 nM to 1 000 nM, with the limit of detection down to 0.773 nM. The whole detection takes only 20 min. In addition, the SERS probe can selectively detect cortisol in other substances with similar chemical structures, which makes the probe applicable to complex biological systems with good reproducibility and stability. This designed SERS probe has been successfully employed in the detection of mouse serum cortisol, with high accuracy compared with enzyme-linked immunosorbent assay (ELISA) results, demonstrating great potential in actual biological sample detection. Reference | Related Articles | Metrics | Comments（0）

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Advanced growth techniques and challenges in ferroelectric AlScN thin films for next-generation electronic devices Xiaoxi Li, Yuan Fang, Yuchun Li, Zhifan Wu, Shuqi Huang, Yingguo Yang, Bitao Dong, Gengsheng Chen, Yue Hao, Genquan Han Moore and More    2025, 1 (4): 395-409.   DOI: 10.1007/s44275-024-00021-0 Abstract （69）      PDF（pc） （6235KB）（8）       Knowledge map    Save The discovery of ferroelectricity in aluminum scandium nitride (AlScN) thin films has garnered significant research interest, owing to the large remnant polarization, tunable coercive field, excellent thermal stability, high breakdown field, and compatibility with back-end-of-line processes of these thin films. These attributes make AlScN a highly promising candidate for next-generation electronic device applications. Various techniques, such as reactive magnetron sputtering, radiofrequency sputtering, molecular beam epitaxy, metal-organic chemical vapor deposition, and pulsed laser deposition, have been employed to grow ferroelectric AlScN thin films. Critical growth parameters, including deposition atmosphere, precursor selection, and Sc concentration, strongly influence the ferroelectric properties, playing a crucial role in achieving high crystalline quality. This review critically examines the fabrication techniques used for producing ferroelectric AlScN thin films, focusing on the impact of different growth methods and process conditions on their properties. We aim to provide comprehensive guidance to assist future researchers in optimizing their process parameters to achieve the desired ferroelectric characteristics in AlScN thin films. Reference | Related Articles | Metrics | Comments（0）

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Phase change memory programming circuit with improved speed Xinyu Yang, Yu Lei, Qiuyao Yu, Qian Wang, Houpeng Chen, Zhitang Song Moore and More    2025, 1 (3): 208-218.   DOI: 10.1007/s44275-024-00023-y Abstract （54）      PDF（pc） （2295KB）（7）       Knowledge map    Save Phase change memory (PCM) is considered one of the most promising next-generation non-volatile memory types for storage-class memory due to its many advantages, including ultrafast programming, long data retention, high storage density, low power consumption, and compatibility with standard CMOS processes. However, in conventional PCM programming circuits, the first programming operation after power-on suffers from a slow rise time in the programming pulse due to the lack of bias voltage pre-charging in the current source circuit, which leads to reduced consistency in the programming of phase change cells. In this study, we developed two solutions to address the issue associated with conventional PCM programming circuits. We also analyzed conventional programming circuit schemes and designed a PCM programming circuit with improved speed using the SMIC 40 nm CMOS process. The results demonstrated that compared with conventional programming circuits, the PCM programming circuit with improved speed reduced the rise time of SET pulses from 29.6 ns to 7.3 ns and the rise time of RESET pulses from 13.6 ns to 3.1 ns. In addition, it improved the consistency of the programming phase change cells and reduced the power consumption from 11.93 mW to 10.35 mW. Reference | Related Articles | Metrics | Comments（0）

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Wearable self-powered devices based on polymer thermoelectric materials Yi Yang, Hui Li, Zhen Xu, Siyi Luo, Lidong Chen Moore and More    2025, 1 (4): 356-369.   DOI: 10.1007/s44275-024-00020-1 Abstract （80）      PDF（pc） （2241KB）（7）       Knowledge map    Save Driven by rapid advances in the thermoelectric (TE) performance of organic materials, conjugated polymer thermoelectric (PTE) materials are considered ideal candidates for flexible self-powered devices because of their intrinsic flexibility, tailored molecular structure, large-area solution processability, and low thermal conductivity. One promising application is the flexible and wearable TE devices used on the human body to convert human energy (human motion or body heat) into electricity. The self-powered character with extended functions allows PTE devices to monitor human activity or health status. In this review, we first introduce existing high-performance PTE materials and the architectures of PTE devices. Then, we focus on the progress of research on flexible self-powered devices based on PTE materials, including TE generators, TE sensors, and Peltier coolers. Finally, possible challenges in the development of PTE devices are discussed. Reference | Related Articles | Metrics | Comments（0）

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Stability of p-GaN gate AlGaN/GaN HEMTs under static and dynamic drain stress Linfei Gao, Xiaohua Li, Wei He, Xinbo Xiong, Huaibao Yan, Hsien-Chin Chiu, Zhanwu Yang, Lixuan Chen, Qiubao Lin, Kaifeng Wang, Hezhou Liu, Xinke Liu Moore and More    2025, 1 (3): 290-299.   DOI: 10.1007/s44275-025-00029-0 Abstract （76）      PDF（pc） （1746KB）（7）       Knowledge map    Save In this article, we report the investigation into the stability of p-GaN gate high electron mobility transistors (HEMTs) with an internal integrated gate circuit that led to the design of a capacitance-based circuit to address threshold voltage shifts (ΔVTH). Pulse I-V measurement revealed a notable positive gate VTH shift of 0.7 V as the drain voltage increased from 0 to 650 V, highlighting the impact of drain bias on VTH instability. Through the investigation of drain bias-induced VTH instability and the behavior of carriers being transported within the gate region, it was found that the maximum ΔVTH is 0.4 V when a 200-V drain bias is applied; after stress removal, ΔVTH diminishes gradually due to the discharge of capacitance, and holes enter the p-GaN layer to mitigate the depletion of holes. The integration of passive components and p-GaN gate HEMT circuits is suggested to address VTH instability in enhancement-mode HEMT devices. The reliability of power devices is essential for their acceptance in emerging applications. Reference | Related Articles | Metrics | Comments（0）

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Investigating single-molecule fluorescence quenching and molecular motion dynamics at transparent conductive oxide interfaces Zihan Pan, Jin Lu Moore and More    2025, 1 (3): 232-240.   DOI: 10.1007/s44275-024-00025-w Abstract （101）      PDF（pc） （1725KB）（6）       Knowledge map    Save The interaction between single-molecule (SM) fluorescence and transparent conductive oxide interface presents unique opportunities for studying molecular motion dynamics and conformational changes. In this study, we investigate the quenching effect of indium-tin oxide (ITO) on SM fluorescence, focusing on the fluorescent dye Cy3 tethered to the 3′-end of single-stranded DNA (ssDNA). By examining the brightness variations of single Cy3 molecules, we are able to distinguish Cy3-ssDNA covalently attached onto the ITO surface from the case of adsorption. Additionally, we can evaluate the molecular motion dynamics of single ssDNA molecules of varying lengths and conformations on the ITO surface. We believe that our findings make significant contributions to the understanding of molecular interactions at ITO interfaces and offer valuable insights into the potential applications of novel fluorophore motion- and orientation-based biosensing strategies. Reference | Related Articles | Metrics | Comments（0）

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Data encryption based on field effect transistors and memristors Rumeng Yang, Huiqian Hu, Jianyuan Zhang, Donghui Wang, Weiguo Huang Moore and More    2025, 1 (3): 267-289.   DOI: 10.1007/s44275-024-00011-2 Abstract （108）      PDF（pc） （8798KB）（6）       Knowledge map    Save Information security is a critical requirement across military affairs, business, and daily life. Compared to traditional encryption methods, non-volatile memory offers significant advantages for data encryption due to its high-density storage, reliability, rewrite capability, fast data transport, robust handleability, and ease of integration into electrical circuits. This review comprehensively summarizes the latest advancements in functional materials design and fabrication for data storage and encryption. It highlights innovative techniques that leverage the stimulus including optical, electrical, magnetic, and humidity properties, covering both single-stimulus and multi-stimulus synergistic effect. This review also systematically explores notable progress in the field of encryption. Future research directions will focus on developing ultra-low power devices for data encryption, implementing multiple coordinated encryption techniques, and efficiently integrating advanced devices with algorithms to meet evolving security demands. By offering insights into future trends and challenges, this review aims to deepen understanding and inspire innovative perspectives for the ongoing development of advanced encryption devices. Reference | Related Articles | Metrics | Comments（0）

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Self-assembled organic monolayer functionalized MIL-88B for selective acetone detection at room temperature Yuqing Du, Ning Lian, Wei Liu, Zhiheng Zhang, Jiahang Huo, Xin Chen, Junmeng Guo, Peng Cui, Lei Wei, Zuliang Du, Gang Cheng Moore and More    2025, 1 (2): 134-146.   DOI: 10.1007/s44275-024-00014-z Abstract （80）      PDF（pc） （14780KB）（6）       Knowledge map    Save Acetone detection is crucial for diagnosing diseases such as diabetes and lung cancer. Therefore, it is essential to design a room-temperature acetone gas sensor with fast response and recovery times, high sensitivity, high selectivity, and a low detection limit. However, current acetone gas sensors face challenges in achieving high-selectivity detection at room temperature. This study primarily utilizes self-assembled organic monolayer functionalized MIL-88B to prepare selectivity acetone sensors. The results show that the detection sensitivity of the improved sensor to acetone is significantly improved. Compared with the MIL-88B sensor (0.1 ppm), the response value of the MIL-88B@3-aminopropyltrimethoxysilane (APTMS) sensor is increased by about 61.9%. The response to 10 ppm acetone is 83, and the selectivity is greatly improved at room temperature. This can be attributed to the chemical interactions between acetone molecules and APTMS on the sensor surface, which improves the sensor's specific recognition ability for acetone. Additionally, the sensor exhibits better stability and shorter response and recovery times. Consequently, the APTMS functionalization of MIL-88B presents an effective method for preparing room-temperature acetone sensors, combining high sensitivity and selectivity, and offering potential for non-invasive disease diagnosis. Reference | Related Articles | Metrics | Comments（0）

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Mitigating interfacial carrier crowding by an ultrathin LiF interlayer towards efficient and stable perovskite light-emitting diodes Xiaofei Zhang, Lin Wang, Lingmei Kong, Sheng Wang, Jun Dai, Guohua Jia, Xuyong Yang Moore and More    2025, 1 (3): 199-207.   DOI: 10.1007/s44275-024-00018-9 Abstract （47）      PDF（pc） （2225KB）（6）       Knowledge map    Save Quasi-two-dimensional (quasi-2D) perovskite-based light-emitting diodes (PeLEDs) have attracted intensive attention due to their high quantum yields, tunable emission wavelengths, and solution-processing capability, showing great potential in next-generation display and lighting applications. However, further performance enhancement in PeLEDs is severely limited by the uncontrolled transfer of charge carriers under bias, leading to crowding of interfacial carriers and severe efficiency roll-off. Herein, we insert an ultra-thin dielectric buffer layer of lithium fluoride (LiF) into the electron transport layer (ETL) to regulate the transfer dynamics of electrons and passivate the interfacial defects simultaneously. The dielectric LiF interlayer can effectively reduce the efficiency roll-off in PeLEDs by improving the charge balance through preventing the overwhelming injection of electrons. Moreover, the fluoride anions from LiF can passivate the surface defects of the perovskite film, enhancing the radiative recombination. As a result, the LiF interlayer-assisted quasi-2D PeLED presents an outstanding external quantum efficiency (EQE) of 24.03% and a maximum brightness of 30 845 cd m-2. The operational stability of the device is also extended, with a half-lifetime (T50) of 71.28 min (at an initial luminance of 1 000 cd m-2), which is 7.4-fold longer than that for the control device. Reference | Related Articles | Metrics | Comments（0）

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A perspective on boron-based multiple resonance narrowband emitters and devices Mingxu Du, Jianping Zhou, Xiaofeng Luo, Lian Duan, Dongdong Zhang Moore and More    2025, 1 (1): 79-98.   DOI: 10.1007/s44275-024-00006-z Abstract （58）      PDF（pc） （17205KB）（6）       Knowledge map    Save Boron-based multiple resonance thermally activated delayed fluorescent (MR-TADF) emitters have shown great promises for applications in high-definition displays. This class of heteroatom-doped nanographene materials typically show very narrow-band emission, small singlet-triplet split (ΔEST) values, high Photoluminescence quantum yield, quality chemical and thermal stabilities. Undoubtedly, boron-based MR-TADF emitters hold a leading position in satisfying the wide-color gamut standard of BT. 2020 (The International Telecommunication Union announced a new color gamut standard of broadcast service television for ultra-high-definition TV in 2012). Thus, the development of novel boron-based MR-TADF emitters attracted a great deal of attention from both academia and industry. Here, a comprehensive overview of the latest advances in boron-based MR-TADF emitters is presented, therein, rational strategies for molecular designs, as well as the consequent optical behavior and efficiency and lifetime improvement in organic light-emitting diodes (OLED) devices are discussed. Finally, the challenges as well as some future research directions to unlock the full potential of this fascinating class of materials are provided. Reference | Related Articles | Metrics | Comments（0）

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Heterogeneous and hybrid integration system in display technology Sixin Huang, Haohui Long, Jianhui Li, Ziqing Zhou Moore and More    2025, 1 (1): 40-61.   DOI: 10.1007/s44275-024-00001-4 Abstract （64）      PDF（pc） （13829KB）（5）       Knowledge map    Save The development tendency of “More than Display” is proposed for the display and semiconductor technologies, and the new-brand architecture of heterogeneous integration system in display (HiSID) is established in accordance with the demands of third generation Micro/Mini-LED devices. Many functional units (e.g., display units, storage units, sensing units, communication units and computing units) are integrated into one display main-board based on the semiconductor technology and electronic packaging. The advantages and details of miniaturization, intelligent, advanced integration, signal integrity with low latency performance, process compatibility and reliability are introduced. The interconnection requirements and design of the HiSID model with artificial intelligence are also summarized in this paper. It will provide technical guidance and references for the commercial application, core technology, and breakthrough direction of the HiSID module in display technology. Reference | Related Articles | Metrics | Comments（0）

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Smart organic crystalline materials based on photo-induced topochemistry Yuhui Song, Xiaomin Zhang, Lijian Ning, Qian Zhou, Jinkun Feng, Yanli Wang, Qiuyu Gong, Yinjuan Huang Moore and More    2025, 1 (3): 241-266.   DOI: 10.1007/s44275-024-00015-y Abstract （51）      PDF（pc） （4720KB）（4）       Knowledge map    Save Presponsive smart organic crystalline materials (SOCMs) have emerged as an attractive research topic because of their many advantages, such as well-defined structures, high structural order, and the resulting fast response speeds, as well as high energy conversion efficiency and remarkable dynamic optical/electronic changes or mechanical responses. In this review, we discuss the recent developments in SOCMs based on topochemistry beyond coordination compounds, which include [2 + 2] or [4 + 4] photocycloaddition of anthracene and olefin derivatives as well as 1, 4-addition-polymerization of diacetylenes. The detailed design principles and mechanisms associated with smart behavior, photoresponsive physical and chemical properties (i.e., photochromism, photo fluorochromism, and photodeformation), and structure-property relationships are discussed, along with their advanced applications in exciting fields such as intelligent microrobots, encryption, sensors, photoactuators, data storage, and displays. Finally, we summarize the current developments and discuss the major current challenges and future opportunities in this field. We expect that this review will inspire more innovative research into the development of advanced photoresponsive organic smart crystal materials with fast, accurate, and reversible responses, and promote the further development of smart materials and devices. Reference | Related Articles | Metrics | Comments（0）