PERSPECTIVE

Manufacturing carbon nanotube transistors using lift-off process: limitations and prospects

  • Xilong Gao ,
  • Jia Si ,
  • Zhiyong Zhang
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  • 1. School of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing, 100876, China;
    2. Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing, 100871, China

Received date: 2024-09-23

  Revised date: 2024-10-15

  Accepted date: 2024-10-17

  Online published: 2024-11-18

Supported by

This work was supported by the National Natural Science Foundation of China (Grant No. 62274006 and 62225101), the National Key Research and Development Program of China (Grant No. 2022YFB4401601), Guangdong Major Project of Basic Research (Grant No. 2021B0301030003), Jihua Laboratory (Project No. X210141TL210), and Research Project: CNT-DSP-2022.

Abstract

Carbon nanotube field-effect transistors (CNT FETs) are regarded as promising candidates for next-generation energy-efficient computing systems. While research has employed the lift-off process to demonstrate the performance of CNT FETs, this method now poses challenges for enhancing individual FET performance and is not suitable for scalable fabrication. In this paper, we summarize the limitations of the lift-off process and point out that future advancements in manufacturing techniques should prioritize the development of etching processes.

Cite this article

Xilong Gao , Jia Si , Zhiyong Zhang . Manufacturing carbon nanotube transistors using lift-off process: limitations and prospects[J]. Moore and More, 2025 , 1(2) : 195 -198 . DOI: 10.1007/s44275-024-00016-x

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