| [1] Cao W, Bu H, Vinet M, Cao M, Takagi S, Hwang S et al (2023) The future transistors. Nature 620(7974):501-515. https://doi.org/10.1038/s41586-023-06145-x [2] International Technology Roadmap for Semiconductors (2009) Semiconductor Industry Association. https://www.semiconductors.org/resources/2009-international-technology-roadmap-for-semiconductors-itrs/. Accessed 15 Oct 2024
 [3] Dürkop T, Getty SA, Cobas E, Fuhrer MS (2004) Extraordinary mobility in semiconducting carbon nanotubes. Nano Lett 4(1):35-39. https://doi.org/10.1021/nl034841q
 [4] Purewal MS, Hong BH, Ravi A, Chandra B, Hone J, Kim P (2007) Scaling of resistance and electron mean free path of single-walled carbon nanotubes. Phys Rev Lett 98(18):186808. https://doi.org/10.1103/PhysRevLett.98.186808
 [5] Xu L, Qiu C, Zhao C, Zhang Z, Peng L (2019) Insight into ballisticity of room-temperature carrier transport in carbon nanotube field-effect transistors. IEEE Trans Electron Devices 66(8):3535-3540. https://doi.org/10.1109/TED.2019.2920846
 [6] Zhang Q, Zhang Y, Luo Y, Yin H (2024) New structure transistors for advanced technology node CMOS ICs. Natl Sci Rev 11(3):nwae008. https://doi.org/10.1093/nsr/nwae008
 [7] Qiu C, Zhang Z, Xiao M, Yang Y, Zhong D, Peng L (2017) Scaling carbon nanotube complementary transistors to 5-nm gate lengths. Science 355(6322):271-276. https://doi.org/10.1126/science.aaj1628
 [8] Lin Y, Cao Y, Ding S, Zhang P, Xu L, Liu C et al (2023) Scaling aligned carbon nanotube transistors to a sub-10 nm node. Nat Electron 6(7):506-515. https://doi.org/10.1038/s41928-023-00983-3
 [9] Liu Y, Ding S, Li W, Zhang Z, Pang Z, Ze Y et al (2024) Interface states in gate stack of carbon nanotube array transistors. ACS Nano 18(29):19086-19098. https://doi.org/10.1021/acsnano.4c03989
 [10] Liu C, Cao Y, Wang B, Zhang Z, Lin Y, Xu L et al (2022) Complementary transistors based on aligned semiconducting carbon nanotube arrays. ACS Nano 16(12):21482-21490. https://doi.org/10.1021/acsnano.2c10007
 [11] Si J, Zhang P, Zhao C, Lin D, Xu L, Xu H et al (2024) A carbon-nanotube-based tensor processing unit. Nat Electron 7(8):684-693. https://doi.org/10.1038/s41928-024-01211-2
 [12] Fonash SJ (1990) An overview of dry etching damage and contamination effects. J Electrochem Soc 137(12):3885. https://doi.org/10.1149/1.2086322
 [13] Hong D, Kim Y, Chae H (2024) Atomic layer etching of SiO2 for nanoscale semiconductor devices: A review. Appl Sci Converg Technol 33(1):1-6. https://doi.org/10.5757/ASCT.2024.33.1.1
 [14] Si J, Zhang P, Zhang Z (2024) Road map for, and technical challenges of, carbon-nanotube integrated circuit technology. Natl Sci Rev 11(3):nwad261. https://doi.org/10.1093/nsr/nwad261
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