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A perspective on boron-based multiple resonance narrowband emitters and devices
Mingxu Du, Jianping Zhou, Xiaofeng Luo, Lian Duan, Dongdong Zhang
Moore and More
2025, 1 (1):
79-98.
DOI: 10.1007/s44275-024-00006-z
Boron-based multiple resonance thermally activated delayed fluorescent (MR-TADF) emitters have shown great promises for applications in high-definition displays. This class of heteroatom-doped nanographene materials typically show very narrow-band emission, small singlet-triplet split (ΔEST) values, high Photoluminescence quantum yield, quality chemical and thermal stabilities. Undoubtedly, boron-based MR-TADF emitters hold a leading position in satisfying the wide-color gamut standard of BT. 2020 (The International Telecommunication Union announced a new color gamut standard of broadcast service television for ultra-high-definition TV in 2012). Thus, the development of novel boron-based MR-TADF emitters attracted a great deal of attention from both academia and industry. Here, a comprehensive overview of the latest advances in boron-based MR-TADF emitters is presented, therein, rational strategies for molecular designs, as well as the consequent optical behavior and efficiency and lifetime improvement in organic light-emitting diodes (OLED) devices are discussed. Finally, the challenges as well as some future research directions to unlock the full potential of this fascinating class of materials are provided.
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