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    GaN-on-diamond technology for next-generation power devices
    Kangkai Fan, Jiachang Guo, Zihao Huang, Yu Xu, Zengli Huang, Wei Xu, Qi Wang, Qiubao Lin, Xiaohua Li, Hezhou Liu, Xinke Liu
    Moore and More    2025, 1 (4): 370-394.   DOI: 10.1007/s44275-024-00022-z
    Abstract （32）      PDF（pc） （3949KB）（5）       Save
    Gallium nitride (GaN)-based power devices have attracted significant attention due to their superior performance in high-frequency and high-power applications. However, the high-power density in these devices often induces severe self-heating effects (SHEs), which degrade their performance and reliability. Traditional thermal management solutions have struggled to efficiently dissipate heat, thereby leading to suboptimal real-world performance compared with theoretical predictions. To address this challenge, diamond has emerged as a highly promising substrate material for GaN devices, primarily due to its exceptional thermal conductivity and mechanical stability. GaN-on-diamond technology has a thermal conductivity of 2 200 W/m/K and it significantly enhances heat dissipation at the chip level. In this review, we provide a systematic overview of the two main integration methods for GaN and diamond: bonding and epitaxial growth techniques. Moreover, we elaborate on the impact of thermal boundary resistance (TBR) at the interface. According to the diffuse mismatch model, the TBR of GaN-on-diamond interfaces can be as low as 3 m2K/GW, which is markedly superior to silicon carbide substrates. In addition, novel techniques such as patterned growth, nanocrystalline diamond (NCD) capping films, and diamond passivation layers have been explored to further enhance thermal management capabilities. We also consider the roles of intermediate dielectric layers in reducing TBR, promoting diamond nucleation, and protecting the GaN layer. Thus, in this review, we summarize the current state of research into GaN-on-diamond technology, highlighting its revolutionary impact on thermal management for power devices and providing new pathways for the development of high-power GaN devices in the future.
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    Integrated plasmonic ruler using terahertz multi-BIC metasurface for digital biosensing
    Qun Ren, Sheng Jia, Jingtong Li, Liu He, Yan Xu, Hao Huang, Xiaoman Wang, ZherYian Ooi, Yongshan Liang, Yaoyin Zhang, Hang Xu, Zhang Zhang, Jianwei You, Wei E. I. Sha, Jianquan Yao
    Moore and More    2025, 1 (3): 219-231.   DOI: 10.1007/s44275-025-00027-2
    Abstract （20）      PDF（pc） （2424KB）（0）       Save
    In recent years, continuous bound states in the continuum (BIC) have gained significant attention for their practical applications in optics, chip technology, and modern communication. Traditional approaches to realizing and analyzing BIC typically rely on magnetic dipole models, which have limitations in quantitative analysis and integration. This creates a gap in understanding how to efficiently harness BIC with higher Q-factors for enhanced performance in real-world applications, particularly in scenarios involving terahertz imaging and multi-channel communication. In this study, we introduce a novel approach using a metallic resonator model that leverages toroidal dipole moments to generate symmetry-protected BIC with high Q-factors. By systematically varying the asymmetry parameters of the metasurface, we gradually break its symmetry, achieving a transition from the BIC mode to the quasi-BIC mode and facilitating the gradual release of stored electromagnetic energy. Our theoretical analysis confirms the existence and generation of BIC, and experimental measurements of the transmission response spectrum validate these theoretical predictions. The results indicate that terahertz metasurface with high Q-factors can produce strong resonances at specific frequencies, enhancing resistance to electromagnetic interference and ensuring stable imaging quality in complex environments. Additionally, this study suggests the potential for an integrated plasmonic ruler to achieve high-resolution and efficient biological imaging. These findings bridge the gap by demonstrating how high Q-factor BIC can be effectively utilized for multi-channel terahertz dynamic imaging and biosensing applications. This advancement lays a new foundation for developing robust systems in multi-channel communication and biomedical sensing, offering significant potential for future technological and medical innovations.
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