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Advanced growth techniques and challenges in ferroelectric AlScN thin films for next-generation electronic devices
Xiaoxi Li, Yuan Fang, Yuchun Li, Zhifan Wu, Shuqi Huang, Yingguo Yang, Bitao Dong, Gengsheng Chen, Yue Hao, Genquan Han
Moore and More
2025, 1 (4):
395-409.
DOI: 10.1007/s44275-024-00021-0
The discovery of ferroelectricity in aluminum scandium nitride (AlScN) thin films has garnered significant research interest, owing to the large remnant polarization, tunable coercive field, excellent thermal stability, high breakdown field, and compatibility with back-end-of-line processes of these thin films. These attributes make AlScN a highly promising candidate for next-generation electronic device applications. Various techniques, such as reactive magnetron sputtering, radiofrequency sputtering, molecular beam epitaxy, metal-organic chemical vapor deposition, and pulsed laser deposition, have been employed to grow ferroelectric AlScN thin films. Critical growth parameters, including deposition atmosphere, precursor selection, and Sc concentration, strongly influence the ferroelectric properties, playing a crucial role in achieving high crystalline quality. This review critically examines the fabrication techniques used for producing ferroelectric AlScN thin films, focusing on the impact of different growth methods and process conditions on their properties. We aim to provide comprehensive guidance to assist future researchers in optimizing their process parameters to achieve the desired ferroelectric characteristics in AlScN thin films.
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