Advanced growth techniques and challenges in ferroelectric AlScN thin films for next-generation electronic devices

doi:10.1007/s44275-024-00021-0

Moore and More ›› 2025, Vol. 1 ›› Issue (4): 395-409.DOI: 10.1007/s44275-024-00021-0

• Review • 上一篇

Advanced growth techniques and challenges in ferroelectric AlScN thin films for next-generation electronic devices

Xiaoxi Li^1,2, Yuan Fang¹, Yuchun Li³, Zhifan Wu¹, Shuqi Huang¹, Yingguo Yang^3,4, Bitao Dong⁵, Gengsheng Chen³, Yue Hao^1,2, Genquan Han^1,2

1. Hangzhou Institute of Technology, Xidian University, Hangzhou, 311200, China;
2. School of Microelectronics, Xidian University, Xi'an 710071, China;
3. State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai, 200433, China;
4. Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Institute of Applied Physics & Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, 201208, China;
5. Division of Solid State Physics, Department of Materials Sciences and Engineering, Angstrom Laboratory, Uppsala University, 75105, Uppsala, Sweden

收稿日期:2024-09-03 修回日期:2024-12-03 接受日期:2024-12-04 出版日期:2025-11-29 发布日期:2025-06-04
通讯作者: Yingguo Yang,E-mail:yangyingguo@fudan.edu.cn;Bitao Dong,E-mail:bitao.dong@kemi.uu.se;Gengsheng Chen,E-mail:gschen@fudan.edu.cn;Genquan Han,E-mail:gqhan@xidian.edu.cn
Xiaoxi Li obtained her undergraduate degree from the Department of Microelectronics at Xidian University and received her Ph.D. in Microelectronics from Fudan University. After completing her Ph.D., she continued her research at Xidian University. Her research interests include novel ferroelectric devices and applications.
Yuan Fang received her bachelor’s degree in Microelectronics Science and Engineering from Yangzhou University in 2023. She is studying a master’s degree in Hangzhou Institute of Technology, Xidian University, Hangzhou, China. Her research interests include ferroelectric devices and applications.
Yuchun Li received his bachelor’s degree from the School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China, in 2020. He is currently a Ph.D. candidate in Microelectronics and Solid-State Electronics, School of Microelectronics, Fudan University, Shanghai, China. His research interests include novel non-volatile ferroelectric memory materials and devices.
Zhifan Wu received his bachelor’s degree in Electromagnetic Fields and Wireless Technology from Chongqing University of Posts and Telecommunications in 2021. He is currently a master’s student at the School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications. His research interests include Ga₂O₃ UV detector and applications.
Shuqi Huang received a B.Eng. degree from Xi’an University of Technology, Xi’an, China. She is currently pursuing a master’s degree with the School of Microelectronics, Xidian University, Xi’an, China. Her research interests include photoelectric device design and applications.
Yingguo Yang is a researcher at Fudan University and works at Shanghai Synchrotron Radiation Facility (SSRF) as an advanced scientist. He has been honored with distinguished awards for his distinctive contribution toward interfacing materials for multiinter-trans disciplinary fields of science, engineering, and technology. He was elected a Fellow of IAAM (International Association of Advanced Materials) in 2022 and awarded the IAAM Scientist Medal in 2023. He has published more than 200 research papers in Science, Nature, Advanced Materials, etc. His current research focuses on interface physics of integrated circuit, perovskites solar cells, light-emitting diode, detector, spinoptoelectronic devices, and development of Synchrotron-based in situ techniques, such as GIWAXS and GISAXS.
Bitao Dong is a researcher at Fudan University and works at Shanghai Synchrotron Radiation Facility (SSRF) as an advanced scientist. He has been honored with distinguished awards for his distinctive contribution toward interfacing materials for multiinter-trans disciplinary fields of science, engineering, and technology. He was elected a Fellow of IAAM (International Association of Advanced Materials) in 2022 and awarded the IAAM Scientist Medal in 2023. He has published more than 200 research papers in Science, Nature, Advanced Materials, etc. His current research focuses on interface physics of integrated circuit, perovskites solar cells, light-emitting diode, detector, spin-optoelectronic devices, and development of Synchrotron-based in situ techniques, such as GIWAXS and GISAXS.
Gengsheng Chen received his B.E. degree from Shanghai Jiao Tong University, China, and his Ph.D. degree from Fudan University, China. He is currently a professor with the School of Microelectronics, Fudan University. He has published over 200 articles in international journals, conferences, and Chinese key journals. His major research interests include signal and image processing, computer vision, high-performance computing and embedded systems.
Yue Hao is a Member of the Chinese Academy of Sciences, Vice president of Xidian University, professor, doctor, advisor of Ph.D. candidates at the School of Microelectronics, Xidian University, China. He received a B.S. degree in semiconductor physics and devices from Xidian University, Xi’an, China, in 1982, and a Ph.D. degree in computing mathematics from Xi’an Jiao Tong University, Xi’an, in 1990. Professor Hao has long been engaged in scientific research and talent training in the fields of new-type wide-forbiddenband semiconductor materials and devices, micro-nanometer semiconductor devices, and highly reliable integrated circuits. He is the chief scientist for the products of the national major basic research “973” program, national “Young and Middle-aged Expert with Outstanding Contributions”, and a renowned expert in the field of microelectronic technology. He has made systematic creative achievements both in research on and popularization of the third-generation gallium nitride/ silicon carbide (wide-forbidden-band) semiconductor functional materials and microwave devices, and semiconductor illuminating shortwavelength photoelectric materials and devices and in the research on the reliability and failure mechanism of micro-nanometer CMOS devices.
Genquan Han is a full professor at Xidian University and a recipient of the National Science Fund for Distinguished Young Scholars. He graduated from Tsinghua University with a bachelor’s degree and received his Ph.D. from the Institute of Semiconductors, Chinese Academy of Sciences in 2008. After graduation, he joined the National University of Singapore to conduct research on advanced microelectronic devices and made original contributions to the field of advanced CMOS device research. Since returning to China in 2013, he has mainly focused on research in postMoore new micro/nano devices and chips, ferroelectric neuromorphic computing devices and chips, and wide-bandgap Ga₂O₃ heterojunction integrated materials and power devices. He serves as an editor for IEEE Electron Device Letters and National Science Open (NSO). Prof. Han has won the Shaanxi Provincial Youth Science and Technology Award and the Excellent Graduation Thesis Supervisor Award from the Chinese Electronics Society.
基金资助:
This work was supported by the China Postdoctoral Science Foundation (2023M742732), the Postdoctoral Fellowship Program of CPSF under (Grant No. GZC20241303), the Fundamental Research Funds for the Central Universities (XJSJ24100), the National Natural Science Foundation of China (Grant Nos. 62404176, 62025402, 62090033, 92364204, 9226420, and 62293522) and Major Program of Zhejiang Natural Science Foundation (Grant No. LDT23F04024F04).

Advanced growth techniques and challenges in ferroelectric AlScN thin films for next-generation electronic devices

Xiaoxi Li^1,2, Yuan Fang¹, Yuchun Li³, Zhifan Wu¹, Shuqi Huang¹, Yingguo Yang^3,4, Bitao Dong⁵, Gengsheng Chen³, Yue Hao^1,2, Genquan Han^1,2

1. Hangzhou Institute of Technology, Xidian University, Hangzhou, 311200, China;
2. School of Microelectronics, Xidian University, Xi'an 710071, China;
3. State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai, 200433, China;
4. Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Institute of Applied Physics & Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, 201208, China;
5. Division of Solid State Physics, Department of Materials Sciences and Engineering, Angstrom Laboratory, Uppsala University, 75105, Uppsala, Sweden

Received:2024-09-03 Revised:2024-12-03 Accepted:2024-12-04 Online:2025-11-29 Published:2025-06-04
Contact: Yingguo Yang,E-mail:yangyingguo@fudan.edu.cn;Bitao Dong,E-mail:bitao.dong@kemi.uu.se;Gengsheng Chen,E-mail:gschen@fudan.edu.cn;Genquan Han,E-mail:gqhan@xidian.edu.cn
Supported by:
This work was supported by the China Postdoctoral Science Foundation (2023M742732), the Postdoctoral Fellowship Program of CPSF under (Grant No. GZC20241303), the Fundamental Research Funds for the Central Universities (XJSJ24100), the National Natural Science Foundation of China (Grant Nos. 62404176, 62025402, 62090033, 92364204, 9226420, and 62293522) and Major Program of Zhejiang Natural Science Foundation (Grant No. LDT23F04024F04).

摘要/Abstract

摘要： The discovery of ferroelectricity in aluminum scandium nitride (AlScN) thin films has garnered significant research interest, owing to the large remnant polarization, tunable coercive field, excellent thermal stability, high breakdown field, and compatibility with back-end-of-line processes of these thin films. These attributes make AlScN a highly promising candidate for next-generation electronic device applications. Various techniques, such as reactive magnetron sputtering, radiofrequency sputtering, molecular beam epitaxy, metal-organic chemical vapor deposition, and pulsed laser deposition, have been employed to grow ferroelectric AlScN thin films. Critical growth parameters, including deposition atmosphere, precursor selection, and Sc concentration, strongly influence the ferroelectric properties, playing a crucial role in achieving high crystalline quality. This review critically examines the fabrication techniques used for producing ferroelectric AlScN thin films, focusing on the impact of different growth methods and process conditions on their properties. We aim to provide comprehensive guidance to assist future researchers in optimizing their process parameters to achieve the desired ferroelectric characteristics in AlScN thin films.

关键词: AlScN, Wurtzite, Ferroelectric, Growth technique

Abstract: The discovery of ferroelectricity in aluminum scandium nitride (AlScN) thin films has garnered significant research interest, owing to the large remnant polarization, tunable coercive field, excellent thermal stability, high breakdown field, and compatibility with back-end-of-line processes of these thin films. These attributes make AlScN a highly promising candidate for next-generation electronic device applications. Various techniques, such as reactive magnetron sputtering, radiofrequency sputtering, molecular beam epitaxy, metal-organic chemical vapor deposition, and pulsed laser deposition, have been employed to grow ferroelectric AlScN thin films. Critical growth parameters, including deposition atmosphere, precursor selection, and Sc concentration, strongly influence the ferroelectric properties, playing a crucial role in achieving high crystalline quality. This review critically examines the fabrication techniques used for producing ferroelectric AlScN thin films, focusing on the impact of different growth methods and process conditions on their properties. We aim to provide comprehensive guidance to assist future researchers in optimizing their process parameters to achieve the desired ferroelectric characteristics in AlScN thin films.

Key words: AlScN, Wurtzite, Ferroelectric, Growth technique

Xiaoxi Li, Yuan Fang, Yuchun Li, Zhifan Wu, Shuqi Huang, Yingguo Yang, Bitao Dong, Gengsheng Chen, Yue Hao, Genquan Han. Advanced growth techniques and challenges in ferroelectric AlScN thin films for next-generation electronic devices[J]. Moore and More, 2025, 1(4): 395-409.

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Advanced growth techniques and challenges in ferroelectric AlScN thin films for next-generation electronic devices

Advanced growth techniques and challenges in ferroelectric AlScN thin films for next-generation electronic devices

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