Manufacturing carbon nanotube transistors using lift-off process: limitations and prospects

doi:10.1007/s44275-024-00016-x

Moore and More ›› 2025, Vol. 1 ›› Issue (2): 195-198.DOI: 10.1007/s44275-024-00016-x

• PERSPECTIVE • 上一篇

Manufacturing carbon nanotube transistors using lift-off process: limitations and prospects

Xilong Gao^1,2, Jia Si², Zhiyong Zhang²

1. School of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing, 100876, China;
2. Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing, 100871, China

收稿日期:2024-09-23 修回日期:2024-10-15 接受日期:2024-10-17 出版日期:2024-11-18 发布日期:2024-11-18
通讯作者: Jia Si,E-mail:sijia@pku.edu.cn
Xilong Gao received his bachelor’s degree in electronic science and technology from Beijing University of Chemical Technology in 2022. He is currently pursuing a master’s degree in next-generation electronic information at Beijing University of Posts and Telecommunications. His research interest mainly focuses on the fabrication of high-performance field-effect transistors based on carbon nanotubes.
Jia Si obtained a doctoral degree from the School of Electronics, Peking University in 2019. She is now an assistant research professor at the carbon-based electronics research center in Peking University. Her main research interests include new principle electronic devices, three-dimensional monolithic integration systems, and energy-efficient carbon-based computing circuits.
Zhiyong Zhang is now a professor at the School of Electronics, Peking University and the director of the Key Laboratory for the Physics and Chemistry of Nanodevices and deputy director of the Center for Carbon-Based Electronics at Peking University. He is mainly engaged in research on carbon-based nanoelectronics, exploring CMOS integrated circuits, sensors, and other new information device technologies based on carbon nanotubes, and promoting the practical development of carbonbased information device technology.
基金资助:
This work was supported by the National Natural Science Foundation of China (Grant No. 62274006 and 62225101), the National Key Research and Development Program of China (Grant No. 2022YFB4401601), Guangdong Major Project of Basic Research (Grant No. 2021B0301030003), Jihua Laboratory (Project No. X210141TL210), and Research Project: CNT-DSP-2022.

Manufacturing carbon nanotube transistors using lift-off process: limitations and prospects

Xilong Gao^1,2, Jia Si², Zhiyong Zhang²

1. School of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing, 100876, China;
2. Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing, 100871, China

Received:2024-09-23 Revised:2024-10-15 Accepted:2024-10-17 Online:2024-11-18 Published:2024-11-18
Contact: Jia Si,E-mail:sijia@pku.edu.cn
Supported by:
This work was supported by the National Natural Science Foundation of China (Grant No. 62274006 and 62225101), the National Key Research and Development Program of China (Grant No. 2022YFB4401601), Guangdong Major Project of Basic Research (Grant No. 2021B0301030003), Jihua Laboratory (Project No. X210141TL210), and Research Project: CNT-DSP-2022.

摘要/Abstract

摘要： Carbon nanotube field-effect transistors (CNT FETs) are regarded as promising candidates for next-generation energy-efficient computing systems. While research has employed the lift-off process to demonstrate the performance of CNT FETs, this method now poses challenges for enhancing individual FET performance and is not suitable for scalable fabrication. In this paper, we summarize the limitations of the lift-off process and point out that future advancements in manufacturing techniques should prioritize the development of etching processes.

关键词: Carbon nanotube, Lift-off process, Dry-etching, Nanodevice manufacturing

Abstract: Carbon nanotube field-effect transistors (CNT FETs) are regarded as promising candidates for next-generation energy-efficient computing systems. While research has employed the lift-off process to demonstrate the performance of CNT FETs, this method now poses challenges for enhancing individual FET performance and is not suitable for scalable fabrication. In this paper, we summarize the limitations of the lift-off process and point out that future advancements in manufacturing techniques should prioritize the development of etching processes.

Key words: Carbon nanotube, Lift-off process, Dry-etching, Nanodevice manufacturing

Xilong Gao, Jia Si, Zhiyong Zhang. Manufacturing carbon nanotube transistors using lift-off process: limitations and prospects[J]. Moore and More, 2025, 1(2): 195-198.

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Manufacturing carbon nanotube transistors using lift-off process: limitations and prospects

Manufacturing carbon nanotube transistors using lift-off process: limitations and prospects

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