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Data encryption based on field effect transistors and memristors
Rumeng Yang, Huiqian Hu, Jianyuan Zhang, Donghui Wang, Weiguo Huang
Moore and More
2025, 1 (3):
267-289.
DOI: 10.1007/s44275-024-00011-2
Information security is a critical requirement across military affairs, business, and daily life. Compared to traditional encryption methods, non-volatile memory offers significant advantages for data encryption due to its high-density storage, reliability, rewrite capability, fast data transport, robust handleability, and ease of integration into electrical circuits. This review comprehensively summarizes the latest advancements in functional materials design and fabrication for data storage and encryption. It highlights innovative techniques that leverage the stimulus including optical, electrical, magnetic, and humidity properties, covering both single-stimulus and multi-stimulus synergistic effect. This review also systematically explores notable progress in the field of encryption. Future research directions will focus on developing ultra-low power devices for data encryption, implementing multiple coordinated encryption techniques, and efficiently integrating advanced devices with algorithms to meet evolving security demands. By offering insights into future trends and challenges, this review aims to deepen understanding and inspire innovative perspectives for the ongoing development of advanced encryption devices.
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